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BCW66KGE6327HTSA1

Description
Bipolar Transistors - BJT AF TRANSISTORS
CategoryDiscrete semiconductor    The transistor   
File Size522KB,7 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BCW66KGE6327HTSA1 Overview

Bipolar Transistors - BJT AF TRANSISTORS

BCW66KGE6327HTSA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time4 weeks
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
GuidelineAEC-Q101
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)170 MHz
BCW66K
NPN Silicon AF Transistors
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary type: BCW68 (PNP)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
3
1
2
Type
BCW66KF
BCW66KG
BCW66KH
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Marking
EFs
EGs
EHs
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
3=C
3=C
3=C
Package
SOT23
SOT23
SOT23
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Value
45
75
5
800
1
100
200
500
150
-65 ... 150
Unit
V
mA
A
mA
mW
°C
Peak collector current,
t
p
10 ms
Base current
Peak base current
Total power dissipation-
T
S
115 °C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
Symbol
R
thJS
Value
70
Unit
K/W
1
2011-09-30

BCW66KGE6327HTSA1 Related Products

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Description Bipolar Transistors - BJT AF TRANSISTORS Bipolar Transistors - BJT NPN 45.0 V 100 mA Bipolar Transistors - BJT AF TRANSISTORS
Is it Rohs certified? conform to conform to conform to
Maker Infineon Infineon Infineon
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Factory Lead Time 4 weeks 4 weeks 4 weeks
Maximum collector current (IC) 0.8 A 0.8 A 0.8 A
Collector-emitter maximum voltage 45 V 45 V 45 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 40 40
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN
Guideline AEC-Q101 AEC-Q101 AEC-Q101
surface mount YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 170 MHz 170 MHz 170 MHz
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