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ZTX1149ASTOB

Description
Bipolar Transistors - BJT PNP High Gain & Crnt
Categorysemiconductor    Discrete semiconductor   
File Size66KB,4 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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ZTX1149ASTOB Overview

Bipolar Transistors - BJT PNP High Gain & Crnt

ZTX1149ASTOB Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHSDetails
Mounting StyleThrough Hole
Package / CaseTO-92-3
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max- 25 V
Collector- Base Voltage VCBO- 30 V
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 200 mV
Maximum DC Collector Current3 A
Gain Bandwidth Product fT135 MHz
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
DC Current Gain hFE Max270 at 10 mA at 2 V
Height4.01 mm
Length4.77 mm
PackagingBulk
Width2.41 mm
Continuous Collector Current- 3 A
DC Collector/Base Gain hfe Min270 at 10 mA at 2 V, 250 at 500 mA at 2 V, 195 at 2 A at 2 V, 115 at 5 A at 2 V
Pd - Power Dissipation1 W
Factory Pack Quantity4000
Unit Weight0.016000 oz
PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 - January 1997
FEATURES
* V
CEO
= - 25V
* 3 Amp Continuous Current
* 10 Amp Pulse Current
* Low Saturation Voltage
* High Gain
ZTX1149A
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
ZTX1149A
-30
-25
-5
-10
-3
-500
1
-55 to +200
UNIT
V
V
V
A
A
mA
W
°C

ZTX1149ASTOB Related Products

ZTX1149ASTOB ZTX1149ASTOA
Description Bipolar Transistors - BJT PNP High Gain & Crnt Bipolar Transistors - BJT PNP High Gain & Crnt
Product Attribute Attribute Value Attribute Value
Manufacturer Diodes Incorporated Diodes Incorporated
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
RoHS Details Details
Mounting Style Through Hole Through Hole
Package / Case TO-92-3 TO-92-3
Transistor Polarity PNP PNP
Configuration Single Single
Collector- Emitter Voltage VCEO Max - 25 V - 25 V
Collector- Base Voltage VCBO - 30 V - 30 V
Emitter- Base Voltage VEBO - 5 V - 5 V
Collector-Emitter Saturation Voltage - 200 mV - 200 mV
Maximum DC Collector Current 3 A 3 A
Gain Bandwidth Product fT 135 MHz 135 MHz
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
DC Current Gain hFE Max 270 at 10 mA at 2 V 270 at 10 mA at 2 V
Height 4.01 mm 4.01 mm
Length 4.77 mm 4.77 mm
Packaging Bulk Bulk
Width 2.41 mm 2.41 mm
Continuous Collector Current - 3 A - 3 A
DC Collector/Base Gain hfe Min 270 at 10 mA at 2 V, 250 at 500 mA at 2 V, 195 at 2 A at 2 V, 115 at 5 A at 2 V 270 at 10 mA at 2 V, 250 at 500 mA at 2 V, 195 at 2 A at 2 V, 115 at 5 A at 2 V
Pd - Power Dissipation 1 W 1 W
Factory Pack Quantity 4000 2000
Unit Weight 0.016000 oz 0.016000 oz
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