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FMMT596TA

Description
Bipolar Transistors - BJT PNP Medium Power
CategoryDiscrete semiconductor    The transistor   
File Size166KB,6 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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FMMT596TA Overview

Bipolar Transistors - BJT PNP Medium Power

FMMT596TA Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDiodes Incorporated
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time15 weeks
Maximum collector current (IC)0.3 A
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
FMMT596
SOT 23 PNP silicon planar high voltage transistor
Ordering information
Device
FMMT596TA
Reel size
(inches
7
Tape width
(mm)
8
Quantity
per reel
3,000
Device marking
596
C
C
E
B
B
E
Pinout - top view
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
Continuous collector current
Base current
Power dissipation at T
amb
=25°C
Operating and storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
Value
-220
-200
-5
-1
-0.3
-200
500
-55 to +150
Unit
V
V
V
A
A
mA
mW
°C
Issue 4 - July 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com
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