ZXTP2012A
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE
SUMMARY
BV
CEO
= -60V : R
SAT
= 38m ; I
C
= -3.5A
DESCRIPTION
Packaged in the E-line outline this new low saturation 60V PNP transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
•
3.5 amps continuous current
•
Up to 15 amps peak current
•
Very low saturation voltages
•
Excellent gain up to 10 amps
E-line
APPLICATIONS
•
DC - DC converters
•
MOSFET gate drivers
•
Power switches
•
Motor control
ORDERING INFORMATION
DEVICE
ZXTP2012ASTOA
ZXTP2012ASTZ
QUANTITY PER REEL
2,000 units / reel
2,000 units / carton
PINOUT
DEVICE MARKING
ZXT
P20
12
TOP VIEW
ISSUE 2 - NOVEMBER 2005
1
SEMICONDUCTORS
ZXTP2012A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
(a)
Peak pulse current
Practical power dissipation at T
A
=25°C
(a)
Linear derating factor
Power dissipation at T
A
=25°C
Linear derating factor
Operating and storage temperature range
T
j
, T
stg
(b)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
C
I
CM
P
D
P
D
LIMIT
-100
-60
-7
-3.5
-15
1.0
8
0.71
5.7
-55 to 150
UNIT
V
V
V
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to ambient
(a)
Junction to ambient
(b)
SYMBOL
R
JA
R
JA
VALUE
125
175
UNIT
°C/W
°C/W
NOTES
(a) For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
Collector lead length to solder point 4mm.
(b) For a device mounted in a socket in still air conditions. Collector lead length 10mm.
ISSUE 2 - NOVEMBER 2005
SEMICONDUCTORS
2
ZXTP2012A
CHARACTERISTICS
ISSUE 2 - NOVEMBER 2005
3
SEMICONDUCTORS
ZXTP2012A
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
SYMBOL
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
I
CER
R 1k
I
EBO
V
CE(SAT)
1
-14
-50
-80
-145
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
V
BE(SAT)
V
BE(ON)
h
FE
100
100
65
10
Transition frequency
Output capacitance
Switching times
f
T
C
OBO
t
ON
t
OFF
* Measured under pulsed conditions. Pulse width
-960
-850
250
200
120
25
120
48
39
370
300 s; duty cycle
2%.
300
MIN.
-100
-100
-60
-7
TYP.
-120
-120
-80
-8.1
1
1
-20
-0.5
-20
-0.5
-10
-20
-65
-115
-210
-1060
-960
MAX. UNIT CONDITIONS
V
V
V
V
nA
A
nA
A
nA
mV
mV
mV
mV
mV
mV
I
C
=-100 A
I
C
=-1 A, RB 1k
I
C
=-10mA*
I
E
=-100 A
V
CB
=-80V
V
CB
=-80V, T
amb
=100 C
V
CB
=-80V
V
CB
=-80V, T
amb
=100 C
V
EB
=-6V
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-4A, I
B
=-400mA*
I
C
=-4A, I
B
=-400mA*
I
C
=-4A, V
CE
=-1V*
I
C
=-10mA, V
CE
=-1V*
I
C
=-1A, V
CE
=-1V*
I
C
=-4A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
MHz I
C
=-100mA, V
CE
=-10V
f=50MHz
pF
ns
V
CB
=-10V, f=1MHz*
I
C
=-1A, V
CC
=-10V,
I
B1
=I
B2
=-100mA
ISSUE 2 - NOVEMBER 2005
SEMICONDUCTORS
4
ZXTP2012A
TYPICAL CHARACTERISTICS
ISSUE 2 - NOVEMBER 2005
5
SEMICONDUCTORS
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