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FDMC8327L N-Channel PowerTrench
®
MOSFET
October 2013
FDMC8327L
N-Channel PowerTrench
®
MOSFET
40 V, 14 A, 9.7 mΩ
Features
Max r
DS(on)
= 9.7 mΩ at V
GS
= 10 V, I
D
= 12 A
Max r
DS(on)
= 12.5 mΩ at V
GS
= 4.5 V, I
D
= 10 A
Low Profile - 0.8mm max in Power 33
100% UIL test
RoHS Compliant
DC-DC Conversion
General Description
This
N-Channel
MOSFET
is
produced
®
using
Fairchild
Semiconductor’s advanced Power Trench
process that has
been especially tailored to minimize the on-state resistance and
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Renesas Electronics MCUs
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