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BLM7G1822S-80ABY

Description
RF MOSFET Transistors LDMOS 2-stage power MMIC
Categorysemiconductor    Discrete semiconductor   
File Size1MB,18 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BLM7G1822S-80ABY Overview

RF MOSFET Transistors LDMOS 2-stage power MMIC

BLM7G1822S-80ABY Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryRF MOSFET Transistors
TechnologySi
PackagingCut Tape
PackagingReel
Factory Pack Quantity100
BLM7G1822S-80AB;
BLM7G1822S-80ABG
LDMOS 2-stage power MMIC
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
The BLM7G1822S-80AB(G) is a dual section, asymmetric, 2-stage power MMIC using
Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly
suited as small cell final stage in Doherty configuration, or as general purpose driver in the
1805 MHz to 2170 MHz frequency range. Available in gull wing or straight lead outline.
Table 1.
Performance
Typical RF performance at T
case
= 25
C. Test signal: 3GPP test model 1; 64 DPCH; PAR = 9.9 dB
at 0.01% probability on CCDF; specified in a class-AB production circuit.
Test signal
single carrier W-CDMA
carrier section
peaking section
[1]
f
(MHz)
2167.5
2167.5
I
Dq1
[1]
(mA)
40
80
I
Dq2
[1]
(mA)
120
240
V
DS
(V)
28
28
P
L(AV)
(W)
4
8
G
p
(dB)
30
28.3
D
(%)
24
24
ACPR
5M
(dBc)
39.5
36
I
Dq1
represents driver stage; I
Dq2
represents final stage.
1.2 Features and benefits
Designed for broadband operation (frequency 1805 MHz to 2170 MHz)
High section-to-section isolation enabling multiple combinations
High Doherty efficiency thanks to 2 : 1 asymmetry
Integrated temperature compensated bias
Biasing of individual stages is externally accessible
Integrated ESD protection
Excellent thermal stability
High power gain
On-chip matching for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
RF power MMIC for W-CDMA base stations in the 1805 MHz to 2170 MHz frequency
range. Possible circuit topologies are the following as also depicted in
Section 8.1:
Asymmetric final stage in Doherty configuration
Asymmetric driver for high power Doherty amplifier

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Description RF MOSFET Transistors LDMOS 2-stage power MMIC RF MOSFET Transistors LDMOS 2-stage power MMIC
Product Attribute Attribute Value Attribute Value
Manufacturer NXP NXP
Product Category RF MOSFET Transistors RF MOSFET Transistors
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Factory Pack Quantity 100 100
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