Ordering number : EN6139D
3LP01M
P-Channel Small Signal MOSFET
–30V, –0.1A, 10.4
Ω
, Single MCP
Features
•
•
•
http://onsemi.com
Low ON-resistance
High-speed switching
2.5V drive
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
Conditions
Ratings
--30
±10
--0.1
--0.4
0.15
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
*
Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7023A-010
2.0
3
0.15
Ordering & Package Information
Device
3LP01M-TL-E
Package
MCP
SC-70,TO-323
Shipping
3,000
pcs./reel
memo
Pb-Free
3LP01M-TL-E
3LP01M-TL-H
0.425
3LP01M-TL-H
MCP
SC-70,TO-323
3,000
pcs./reel
Pb-Free
and
Halogen Free
1.25
2.1
0 to 0.08
0.2
Packing Type: TL
0.425
1
0.65
2
0.3
Marking
LOT No.
0.3
XA
1 : Gate
2 : Source
3 : Drain
MCP
TL
LOT No.
0.9
Electrical Connection
3
1
2
Semiconductor Components Industries, LLC, 2013
June, 2013
62613 TKIM TC-00002945/71112 TKIM/40908 TIIM TC-00001304/ No.6139-1/6
32406PE MSIM TB-00002153/90100 TSIM TA-2006
3LP01M
Electrical Characteristics
at Ta=25°C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS= --100mA, VGS=0V
VDS= --10V, VGS= --10V, ID= --100mA
See specified Test Circuit.
Conditions
ID= --1mA, VGS=0V
VDS= --30V, VGS=0V
VGS=±8V, VDS=0V
VDS= --10V, ID= --100μA
VDS= --10V, ID= --50mA
ID= --50mA, VGS= --4V
ID= --30mA, VGS= --2.5V
ID= --1mA, VGS= --1.5V
VDS= --10V, f=1MHz
--0.4
80
110
8
11
27
7.5
5.7
1.8
24
55
120
130
1.43
0.18
0.25
--0.83
--1.2
10.4
15.4
54
Ratings
min
--30
--1
±10
-
-1.4
typ
max
Unit
V
μA
μA
V
mS
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VDD= --15V
VIN
D
G
3LP01M
P.G
50Ω
S
ID= --50mA
RL=300Ω
VOUT
0V
--4V
VIN
PW=10μs
D.C.≤1%
No.6139-2/6
3LP01M
--0.10
--0.09
--0.08
ID -- VDS
--4
.0V
--3.5V
--3
.0V
--0.20
ID -- VGS
VDS= --10V
--2
.5
V
--0.18
--0.16
--0.07
--0.06
--0.05
--0.04
--0.03
--0.02
--0.01
0
0
--0.2
Drain Current, ID -- A
Drain Current, ID -- A
--6.0
V
--0.14
--0.12
--0.10
--0.08
--0.06
--0.04
--0.02
0
Ta=
VGS= --1.5V
--0.4 --0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
--2.0
0
--0.5
--1.0
--1.5
--2.0
75
°
--2.5
--3.0
C
--25
°
C
--2.0V
25°C
--3.5
--4.0
Drain to Source Voltage, VDS -- V
30
IT00077
100
RDS(on) -- VGS
Gate to Source Voltage, VGS -- V
IT00078
RDS(on) -- ID
Ta=25°C
Static Drain to Source
On-State Resistance, RDS(on) --
Ω
Static Drain to Source
On-State Resistance, RDS(on) --
Ω
25
7
5
3
2
VGS= --4V
20
15
10
7
5
3
2
1.0
--0.01
Ta=75°C
--25°C
25°C
--50mA
10
ID= --30mA
5
0
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
2
3
5
7
--0.1
2
3
Gate to Source Voltage, VGS -- V
100
7
IT00079
1000
Drain Current, ID -- A
IT00080
RDS(on) -- ID
VGS= --2.5V
Static Drain to Source
On-State Resistance, RDS(on) --
Ω
RDS(on) -- ID
VGS= --1.5V
7
5
3
2
Static Drain to Source
On-State Resistance, RDS(on) --
Ω
5
3
2
Ta=75°C
25°C
10
7
5
3
2
100
7
5
3
2
--25°C
25°C
Ta=75°C
--25°C
2
3
5
7
--1.0
2
3
1.0
--0.01
2
3
5
7
--0.1
2
3
10
--0.1
Drain Current, ID -- A
18
16
14
12
10
8
6
4
2
--60
IT00081
1.0
RDS(on) -- Ta
Drain Current, ID -- mA
|
y
fs
|
-- ID
IT00082
Forward Transfer Admittance,
|
y
fs
|
-- S
7
5
3
2
VDS= --10V
Static Drain to Source
On-State Resistance, RDS(on) --
Ω
= --
GS
V
50m
= --
ID
0V,
--4.
=
V GS
2.5
30
= --
V, I D
mA
25°C
25
°
C
Ta= --
75
°
C
A
0.1
7
5
3
2
--40
--20
0
20
40
60
80
100
120
140
160
0.01
--0.01
2
3
5
7
--0.1
2
3
Ambient Temperature, Ta --
°C
IT00083
Drain Current, ID -- A
IT00084
No.6139-3/6
3LP01M
3
2
IS -- VSD
VGS=0V
Switching Time, SW Time -- ns
1000
7
5
3
2
SW Time -- ID
VDD= --15V
VGS= --4V
Source Current, IS -- A
--0.1
7
5
tf
td(off)
100
7
5
3
2
3
tr
td(on)
2
3
5
7
Ta=7
5
°
C
25
°
C
2
--0.01
--0.5
--25
°
C
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
IT00085
10
--0.01
100
7
5
Ciss, Coss, Crss -- VDS
f=1MHz
Gate to Sourse Voltage, VGS -- V
Diode Forward Voltage, VSD -- V
Drain Current, ID -- A
--10
--9
--8
--7
--6
--5
--4
--3
--2
--1
0
--0.1
IT00086
VGS -- Qg
VDS= --10V
ID= --0.1A
Ciss, Coss, Crss -- pF
3
2
10
7
5
3
2
Ciss
Coss
Crss
0
--5
--10
--15
--20
--25
--30
IT00087
1.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Drain to Source Voltage, VDS -- V
0.20
Total Gate Charge, Qg -- nC
IT00088
PD -- Ta
Allowable Power Dissipation, PD -- W
0.15
0.10
0.05
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT02381
No.6139-4/6
3LP01M
Outline Drawing
3LP01M-TL-E, 3LP01M-TL-H
Mass (g) Unit
0.006 mm
* For reference
Land Pattern Example
Unit: mm
0.7
1.0
2.1
0.65 0.65
No.6139-5/6
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