BD543, BD543A, BD543B, BD543C
NPN SILICON POWER TRANSISTORS
●
●
●
●
●
Designed for Complementary Use with the
BD544 Series
70 W at 25°C Case Temperature
8 A Continuous Collector Current
10 A Peak Collector Current
Customer-Specified Selections Available
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD543
Collector-base voltage (I
E
= 0)
BD543A
BD543B
BD543C
BD543
Collector-emitter voltage (I
B
= 0)
BD543A
BD543B
BD543C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. This value applies for t
p
≤
0.3 ms, duty cycle
≤
10%.
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
V
EBO
I
C
I
CM
P
tot
P
tot
T
A
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
40
60
80
100
40
60
80
100
5
8
10
70
2
-65 to +150
-65 to +150
-65 to +150
260
V
A
A
W
W
°C
°C
°C
°C
V
V
UNIT
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
BD543, BD543A, BD543B, BD543C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BD543
V
(BR)CEO
I
C
= 30 mA
(see Note 4)
V
CE
= 40 V
I
CES
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
V
CE
= 60 V
V
CE
= 80 V
V
CE
= 100 V
I
CEO
I
EBO
V
CE
= 30 V
V
CE
= 60 V
V
EB
=
V
CE
=
V
CE
=
V
CE
=
I
B
=
I
B
=
I
B
=
V
CE
=
5V
4V
4V
4V
0.3 A
1A
1.6 A
4V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
I
C
= 0
I
C
= 1 A
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
3A
5A
3A
5A
8A
5A
(see Notes 4 and 5)
f = 1 kHz
f = 1 MHz
20
3
(see Notes 4 and 5)
(see Notes 4 and 5)
60
40
15
0.5
0.5
1
1.4
V
V
I
B
= 0
BD543A
BD543B
BD543C
BD543
BD543A
BD543B
BD543C
BD543/543A
BD543B/543C
MIN
40
60
80
100
0.4
0.4
0.4
0.4
0.7
0.7
1
mA
mA
mA
V
TYP
MAX
UNIT
h
FE
V
CE(sat)
V
BE
h
fe
V
CE
= 10 V
V
CE
= 10 V
I
C
= 0.5 A
I
C
= 0.5 A
|
h
fe
|
NOTES: 4. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1.79
62.5
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= 6 A
V
BE(off)
= -4 V
I
B(on)
= 0.6 A
R
L
= 5
Ω
†
MIN
I
B(off)
= -0.6 A
t
p
= 20 µs, dc
≤
2%
TYP
0.6
1
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BD543, BD543A, BD543B, BD543C
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
V
CE
= 4 V
T
C
= 25°C
t
p
= 300 µs, duty cycle < 2%
h
FE
- DC Current Gain
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
1000
TCS633AI
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
10
TCS633AE
I
C
= 300 mA
I
C
= 1 A
I
C
= 3 A
I
C
= 6 A
1·0
100
10
0·1
1·0
0·1
1·0
I
C
- Collector Current - A
10
0·01
0·001
0·01
0·1
I
B
- Base Current - A
1·0
10
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
1·2
V
CE
= 4 V
T
C
= 25°C
V
BE
- Base-Emitter Voltage - V
1·1
TCS633AF
1·0
0·9
0·8
0·7
0·6
0·1
1·0
I
C
- Collector Current - A
10
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BD543, BD543A, BD543B, BD543C
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
10
SAS633AF
I
C
- Collector Current - A
1·0
0·1
0·01
1·0
BD543
BD543A
BD543B
BD543C
10
100
1000
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
80
P
tot
- Maximum Power Dissipation - W
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
TIS633AD
Figure 5.
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
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