31GF4-E3
www.vishay.com
Vishay General Semiconductor
Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pellet chip junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low switching losses, high efficiency
Available
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
DO-201AD
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
Package
Diode variations
3.0 A
400 V
60 A
30 ns
1.25 V
150 °C
DO-201AD
Single
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
MECHANICAL DATA
Case:
DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 and M3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current,
0.375" (9.5 mm) lead length
with FIN
without FIN/PCB
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
E
AR
VALUE
400
280
400
3.0
1.5
60
-40 to +150
10
°C
mJ
A
V
UNIT
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load
Operating junction and storage temperature range
Reverse avalanche energy (8/20 μs surge)
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Minimum reverse breakdown voltage
Maximum instantaneous forward voltage
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
3.0 A
TEST CONDITIONS
10 μA
SYMBOL
V
BR
V
F
(1)
VALUE
400
1.25
20
30
UNIT
V
μA
ns
I
R
t
rr
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Revision: 07-Jul-17
Document Number: 88529
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
31GF4-E3
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient
SYMBOL
R
θJA
(1)
VALUE
80
UNIT
°C/W
Note
(1)
Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, PCB mounted
ORDERING INFORMATION
(Example)
PREFERRED P/N
31GF4-E3/54
31GF4-E3/73
UNIT WEIGHT (g)
1.13
1.13
PREFERRED PACKAGE CODE
54
73
BASE QUANTITY
1400
1000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
3.5
1000
Average Forward Rectified Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
0
0
25
50
75
100
125
150
175
Instantaneous Reverse Current (μA)
100
T
J
= 150 °C
10
T
J
= 100 °C
1
0.1
T
J
= 25 °C
0.01
0.001
0
20
40
60
80
100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 3 - Typical Reverse Characteristics
100
100
Instantaneous Forward Current (A)
Peak Forward
Surge
Current (A)
80
T
J
= 150 °C
10
T
J
= 100 °C
T
J
= 25 °C
1
60
40
20
0.1
0
1
10
100
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Number of Cycles at 60 Hz
Instantaneous Forward Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 4 - Typical Instantaneous Forward Characteristics
Revision: 07-Jul-17
Document Number: 88529
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
31GF4-E3
www.vishay.com
Vishay General Semiconductor
1000
Junction Capacitance (pF)
100
10
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-201AD
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.052 (1.32)
0.048 (1.22)
DIA.
Revision: 07-Jul-17
Document Number: 88529
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Revision: 08-Feb-17
1
Document Number: 91000
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