BAS3010S-02LRH
Low VF Schottky Diode
•
Reverse voltage: 30 V
•
Forward current: 1 A
•
Low forward voltage and smallest package
form factor (1.0 x 0.6 x < 4 mm) for
mobile phone battery charger application
•
Pb-free (RoHS compliant) package
BAS3010S-02LRH
1
2
Type
BAS3010S-02LRH
Parameter
Diode reverse voltage
1)
Package
TSLP-2-17
Configuration
single
Symbol
V
R
I
F
I
FSM
T
j
T
op
T
stg
R
thJS
Value
30
1
4
150
-55 ...150
-65 ...150
≤
60
Marking
1T
Unit
V
A
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Forward current
1)
,
T
S
≤
114 °C
Non-repetitive peak surge forward current
(t
p
≤
10 ms)
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Junction - soldering point
2)
1
For
2
For
°C
K/W
T
A
> 25 °C the derating of
V
R
and
I
F
has to be considered
calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2011-06-08
BAS3010S-02LRH
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
Reverse current
1)
V
R
= 10 V
V
R
= 30 V
Forward voltage
1)
I
F
= 1 mA
I
F
= 100 mA
I
F
= 700 mA
I
F
= 1000 mA
V
F
-
-
-
-
200
340
500
570
250
390
570
650
I
R
-
-
-
-
30
300
mV
Unit
µA
AC Characteristics
Diode capacitance
V
R
= 5 V,
f
= 1 MHz
1
Pulsed
C
T
-
10
15
pF
test:
t
p
= 300 µs;
D
= 0.01
2
2011-06-08
BAS3010S-02LRH
Diode capacitance
C
T
=
ƒ
(V
R
)
f
= 1MHz
35
pF
Reverse current
I
R
=
ƒ
(T
A
)
V
R
= Parameter
10
-2
A
10
-3
25
C
T
20
10
-4
15
I
R
10
10
-5
30 V
20 V
10 V
5V
5
0
0
5
10
15
20
V
30
10
-6
0
25
50
75
100
°C
150
V
R
T
A
Reverse current
I
R
=
ƒ(V
R
)
T
A
= Parameter
10
-2
A
10
-3
10
-4
10
-5
TA = + 25°C
-6
Forward Voltage
V
F
=
ƒ
(T
A
)
I
F
= Parameter
0.65
TA = + 125°C
TA = + 85°C
V
IF = 1A
0.55
0.5
V
F
0.45
0.4
IF = 350 mA
I
R
10
10
-7
0.35
10
-8
10
-9
10
-10
0
TA = - 40°C
0.3
0.25
0.2
-50
IF = 100 mA
5
10
15
20
V
30
-25
0
25
50
75
100
°C
150
V
R
T
A
3
2011-06-08
BAS3010S-02LRH
Forward current
I
F
=
ƒ
(V
F
)
Permissible Reverse voltage
V
R
=
ƒ
(T
A
)
t
p
= Paramter, Duty cycle < 0.01
Device mounted on PCB with
R
th
= 160 K/W
10
1
A
10
0
35
V
10
-2
V
Rmax
10
-1
25
I
F
20
10
-3
TA= +125°C
+85°C
+25°C
- 40°C
DC
20 ms
1 ms
15
10
-4
10
10
-5
5
10
-6
0
0.1
0.2
0.3
0.4
V
0.6
0
0
20
40
60
80
100
°C
130
V
F
T
A
Forward current
I
F
=
ƒ
(T
S
)
BAS3010S-02LRH
1100
mA
900
800
I
F
700
600
500
400
300
200
100
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
4
2011-06-08
Package TSLP-2-17
BAS3010S-02LRH
Package Outline
Top view
0.39
+0.01
-0.03
0.05 MAX.
0.65
±0.05
Bottom view
0.6
±0.05
2
2
1
1
Cathode
marking
0.5
±0.035 1)
1) Dimension applies to plated terminal
Foot Print
For board assembly information please refer to Infineon website "Packages"
0.35
0.45
0.3
0.925
1
0.275
0.275
0.375
0.6
Copper
Solder mask
0.35
Stencil apertures
Marking Layout (Example)
BAR90-02LRH
Type code
Cathode marking
Laser marking
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
Reel ø330 mm = 50.000 Pieces/Reel (optional)
4
1.16
0.5
Cathode
marking
0.76
8
0.25
±0.035 1)
1
±0.05
5
2011-06-08
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