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HMC659LC5TR-R5

Description
RF Amplifier pow amp SMT, DC - 15 GHz
CategoryTopical application    Wireless rf/communication   
File Size471KB,8 Pages
ManufacturerADI
Websitehttps://www.analog.com
Environmental Compliance
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HMC659LC5TR-R5 Overview

RF Amplifier pow amp SMT, DC - 15 GHz

HMC659LC5TR-R5 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerADI
Product CategoryRF Amplifier
RoHSDetails
PackagingReel
Factory Pack Quantity500
HMC659LC5
v04.0614
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 15 GHz
Typical Applications
The HMC659LC5 wideband PA is ideal for:
Features
P1dB Output Power: +27.5 dBm
Gain: 19 dB
Output IP3: +35 dBm
Supply Voltage: +8V @ 300 mA
50 Ohm Matched Input/Output
32 Lead Ceramic 5 x 5 mm SMT Package: 25 mm
2
LINEAR & POWER AMPLIFIERS - SMT
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics
Functional Diagram
General Description
The HMC659LC5
is a GaAs MMIC pHEMT
Distributed Power Amplifier which is housed in a
leadless 5 x 5 mm RoHS compliant ceramic SMT
package operating between DC and 15 GHz. The
amplifier provides 19 dB of gain, +35 dBm output IP3
and +27.5 dBm of output power at 1 dB gain
compression, while requiring 300mA from a +8V
supply. Gain flatness is excellent at ±1.4 dB from
DC - 15 GHz making the HMC659LC5 ideal for EW,
ECM, Radar and test equipment applications. The
HMC659LC5 amplifier I/Os are internally matched
to 50 Ohms with no external components. The
HMC659LC5 is compatible with high volume surface
mount manufacturing techniques.
Electrical Specifications,
T
A
= +25 °C, Vdd= +8V, Vgg2= +3V, Idd= 300 mA*
Parameter
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.8V Typ.)
23.5
16
Min.
Typ.
DC - 6
19
± 0.7
0.015
20
19
26.5
28.0
35
3.0
300
24.5
15
Max.
Min.
Typ.
6 - 11
18
± 0.4
0.019
18
20
27.5
28.5
32
2.5
300
23.5
14
Max.
Min.
Typ.
11 - 15
17
± 0.7
0.022
17
15
26.5
27.5
29
3.5
300
Max.
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
*Adjust Vgg1 between -2 to 0V to achieve Idd= 300 mA typical.
1
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery and to place orders: Hittite Microwave
other
For price, delivery, and to place orders: Analog Devices, Inc.,
Chelmsford, MA 01824
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or
Corporation, 2 Elizabeth Drive,
9106, Norwood, MA 02062-9106
One Technology Way, P.O. Box
rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Phone: 781-329-4700 • Order online at www.analog.com
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Application Support: Phone: 1-800-ANALOG-D
Trademarks and registered trademarks are the property of their respective owners.
Application Support: Phone: 978-250-3343 or apps@hittite.com
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