ADVANCE INFORMATION
60V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP6A17E6
SUMMARY
V
(BR)DSS
= -60V; R
DS(ON)
= 0.125
I
D
= -3.0A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT23-6 package
SOT23-6
APPLICATIONS
•
DC - DC Converters
•
Power management functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE
ZXMP6A17E6TA
ZXMP6A17E6TC
REEL
SIZE
7”
13”
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000 units
10000 units
PINOUT
DEVICE MARKING
•
617
Top View
PROVISIONAL ISSUE B - MARCH 2005
1
ZXMP6A17E6
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current V
GS
=10V; T
A
=25°C
(b)
V
GS
=10V; T
A
=70°C
(b)
V
GS
=10V; T
A
=25°C
(a)
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
(b)
Pulsed Source Current (Body Diode)
(c)
Power Dissipation at T
A
=25°C
(a)
Linear Derating Factor
Power Dissipation at T
A
=25°C
(b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
ADVANCE INFORMATION
LIMIT
-60
20
-3.0
-2.4
-2.3
-13.6
-2.5
-13.6
1.1
8.8
1.7
13.6
-55 to +150
UNIT
V
V
A
I
DM
I
S
I
SM
P
D
P
D
T
j
:T
stg
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient
(a)
Junction to Ambient
(b)
SYMBOL
R
θJA
R
θJA
VALUE
113
73
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
PROVISIONAL ISSUE B - MARCH 2005
2
ADVANCE INFORMATION
CHARACTERISTICS
ZXMP6A17E6
1.2
-I
D
Drain Current (A)
Limited
Max Power Dissipation (W)
10
R
DS(ON)
1
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
DC
1s
100ms
10ms
1ms
100us
Single Pulse, T
amb
=25°C
100m
10m
1
10
100
P-channel Safe Operating Area
-V
DS
Drain-Source Voltage (V)
Temperature (°C)
Derating Curve
100
Single Pulse
T
amb
=25°C
Thermal Resistance (°C/W)
100
80
D=0.5
60
40
20
0
100µ 1m
10m 100m
Single Pulse
D=0.2
D=0.05
D=0.1
MaximumPower (W)
1k
10
1
100µ 1m
10m 100m
1
10
100
1k
1
10
100
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
PROVISIONAL ISSUE B - MARCH 2005
3
ZXMP6A17E6
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance
(1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
Reverse Recovery Time
(3)
Reverse Recovery Charge
(3)
V
SD
t
rr
Q
rr
-0.85
26.4
32.7
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
2.4
3.5
30.0
7.4
7.3
15.1
1.8
1.9
C
iss
C
oss
C
rss
670
46.7
28
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
4.9
-1.0
-60
SYMBOL
MIN.
TYP.
ADVANCE INFORMATION
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated)
MAX.
UNI
T
CONDITIONS
V
-1.0
100
A
nA
V
0.125
0.190
S
I
D
=-250 A, V
GS
=0V
V
DS
=-60V, V
GS
=0V
V
GS
= 20V, V
DS
=0V
I =-250 A, V
DS
= V
GS
D
V
GS
=-10V, I
D
=-2.3A
V
GS
=-4.5V, I
D
=-1.9A
V
DS
=-15V,I
D
=-2.3A
pF
pF
pF
V
DS
=-30V, V
GS
=0V,
f=1MHz
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
=-30V,V
GS
=-10V,
I
D
=-2.3A
V
DS
=-30V,V
GS
=-5V,
I
D
=-2.3A
V
DD
=-30V, I
D
=-1A
R
G
6.0 , V
GS
=-10V
-0.95
V
ns
nC
T
J
=25°C, I
S
=-2A,
V
GS
=0V
T
J
=25°C, I
F
=-1.7A,
di/dt= 100A/µs
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE B - MARCH 2005
4
ADVANCE INFORMATION
TYPICAL CHARACTERISTICS
ZXMP6A17E6
T = 25°C
10V
-I
D
Drain Current (A)
1
2.5V
-V
GS
2V
-I
D
Drain Current (A)
10
4.5V
3.5V
3V
T = 150°C
10V
10
4.5V
3.5V
3V
2.5V
2V
1
-V
GS
1.5V
0.1
0.1
0.01
0.1
-V
DS
Drain-Source Voltage (V)
1
10
0.01
0.1
-V
DS
Drain-Source Voltage (V)
1
10
Output Characteristics
2.0
10
Output Characteristics
V
GS
= -10V
I
D
= - 0.9A
R
DS(on)
Normalised R
DS(on)
and V
GS(th)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
50
-I
D
Drain Current (A)
T = 150°C
1
T = 25°C
V
GS(th)
V
GS
= V
DS
I
D
= -250uA
0.1
1
2
3
-V
DS
= 10V
4
5
100
150
-V
GS
Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
R
DS(on)
Drain-Source On-Resistance
(Ω)
2V
-V
GS
2.5V
3V
3.5V
T = 25°C
Normalised Curves v Temperature
-I
SD
Reverse Drain Current (A)
10
T = 150°C
10
1
1
4.5V
10V
0.1
T = 25°C
0.1
0.1
1
10
0.01
0.0
-I
D
Drain Current (A)
-V
SD
Source-Drain Voltage (V)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE B - MARCH 2005
5
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