BLF6G22-45
Power LDMOS transistor
Rev. 3 — 11 March 2013
Product data sheet
1. Product profile
1.1 General description
45 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1.
Typical performance
RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
2110 to 2170
V
DS
(V)
28
P
L(AV)
(W)
2.5
G
p
(dB)
18.5
D
(%)
13
ACPR
(dBc)
49
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an I
Dq
of 405 mA:
Average output power = 2.5 W
Power gain = 18.5 dB (typ)
Efficiency = 13 %
ACPR =
49
dBc
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2000 MHz to 2200 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
NXP Semiconductors
BLF6G22-45
Power LDMOS transistor
1.3 Applications
RF power amplifiers for W-CDMA base stations and multicarrier applications in the
2000 MHz to 2200 MHz frequency range
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
1
Graphic symbol
1
3
2
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF6G22-45
-
Description
flanged ceramic package; 2 mounting holes; 2 leads
Version
SOT608A
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
-
Max
65
+13
+150
225
Unit
V
V
C
C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance from junction
to case
Conditions
T
case
= 80
C;
P
L
= 12.5 W (CW)
Typ
1.7
Unit
K/W
BLF6G22-45
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 11 March 2013
2 of 11
NXP Semiconductors
BLF6G22-45
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C per section; unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
V
DS
= 10 V; I
D
= 72 mA
V
DS
= 28 V; I
D
= 300 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 3.5 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 2.5 A
Min
65
1.4
1.65
-
-
-
-
-
Typ
-
1.9
2.15
-
12.5
-
5
0.2
Max
-
2.4
2.65
1.5
-
150
-
-
Unit
V
V
V
A
A
nA
S
7. Application information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f
1
= 2112.5 MHz; f
2
= 2117.5 MHz; f
3
= 2162.5 MHz; f
4
= 2167.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 405 mA; T
case
= 25
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol
P
L(AV)
G
p
D
ACPR
Parameter
average output power
power gain
drain efficiency
adjacent channel power ratio
P
L(AV)
= 2.5 W
P
L(AV)
= 2.5 W
P
L(AV)
= 2.5 W
Conditions
Min
-
17.3
10.5
-
Typ
2.5
18.5
13
49
Max
-
19.7
-
46
Unit
W
dB
%
dBc
7.1 Ruggedness in class-AB operation
The BLF6G22-45 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 405 mA; P
L
= 45 W (CW); f = 2170 MHz.
BLF6G22-45
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 11 March 2013
3 of 11
NXP Semiconductors
BLF6G22-45
Power LDMOS transistor
22
G
p
(dB)
20
001aah604
60
η
D
(%)
50
η
D
18
G
p
16
40
30
14
20
12
0
10
20
30
40
10
50
60
P
L
(W)
V
DS
= 28 V; I
Dq
= 405 mA; f = 2170 MHz.
Fig 1.
One-tone CW power gain and drain efficiency as functions of load power; typical
values
20
G
p
(dB)
19
001aah605
G
p
60
η
D
(%)
50
−10
IMD
(dBc)
−20
001aah606
IMD3
18
40
−30
IMD5
17
η
D
30
−40
IMD7
16
20
−50
−60
15
10
14
0
10
20
30
40
50
70
P
L(PEP)
(W)
60
0
−70
0
10
20
30
40
50
60
70
P
L(PEP)
(W)
V
DS
= 28 V; I
Dq
= 405 mA; f
1
= 2170 MHz;
f
2
= 2170.1 MHz.
V
DS
= 28 V; I
Dq
= 405 mA; f
1
= 2170 MHz;
f
2
= 2170.1 MHz.
Fig 2.
Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
Fig 3.
Intermodulation distortion as a function of
peak envelope load power; typical values
BLF6G22-45
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 11 March 2013
4 of 11
NXP Semiconductors
BLF6G22-45
Power LDMOS transistor
20
G
p
(dB)
19
η
D
G
p
18
001aah607
30
η
D
(%)
25
−30
ACPR
(dBc)
−35
001aah608
−40
20
−45
17
15
−50
16
10
−55
15
0
2
4
6
5
8
10
P
L(AV)
(W)
−60
0
2
4
6
8
10
P
L(AV)
(W)
V
DS
= 28 V; I
Dq
= 405 mA; f
1
= 2162.5 MHz;
f
2
= 2167.5 MHz; carrier spacing 5 MHz.
V
DS
= 28 V; I
Dq
= 405 mA; f
1
= 2162.5 MHz;
f
2
= 2167.5 MHz; carrier spacing 5 MHz.
Fig 4.
2-carrier W-CDMA power gain and drain
efficiency as functions of average load power;
typical values
Fig 5.
2-carrier W-CDMA adjacent power channel
ratio as a function of average load power;
typical values
8. Test information
V
GG
C4
C3
C5
R1
C2
C18
C6
C10
C11 C12 C13 C14 C15
C16
V
DD
input
50
Ω
C1
C7
C8
C9
C17
output
50
Ω
001aah609
See
Table 8
for list of components.
Fig 6.
Test circuit for operation at 2110 MHz and 2170 MHz
BLF6G22-45
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 11 March 2013
5 of 11
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