Features
Advanced Planar Technology
Dual N Channel MOSFET
Low On-Resistance
Logic Level Gate Drive
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Lead-Free, RoHS Compliant
Automotive Qualified *
AUTOMOTIVE GRADE
AUIRF7313Q
S1
G1
S2
G2
1
2
3
4
8
7
D1
D1
D2
D2
V
DSS
R
DS(on)
typ.
max.
I
D
30V
23m
29m
6.9A
6
5
Top View
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
Base part number
AUIRF7313Q
Absolute Maximum Ratings
Package Type
SO-8
SO-8
AUIRF7313Q
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7313QTR
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
E
AS
dv/dt
T
J
T
STG
Drain-Source Voltage
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
30
6.9
5.8
58
2.4
0.02
± 20
450
3.6
-55 to + 175
Units
V
A
W
W/°C
V
mJ
V/ns
°C
Thermal Resistance
Symbol
R
JL
R
JA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-9-30
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
30
–––
–––
–––
1.0
7.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
AUIRF7313Q
Typ. Max. Units
Conditions
––– –––
V V
GS
= 0V, I
D
= 250µA
0.03 ––– V/°C Reference to 25°C, I
D
= 1mA
23
29
V
GS
= 10V, I
D
= 6.9A
m
32
46
V
GS
= 4.5V, I
D
= 5.5A
–––
3.0
V V
DS
= V
GS
, I
D
= 250µA
––– –––
S V
DS
= 15V, I
D
= 3.5A
–––
1.0
V
DS
= 24V, V
GS
= 0V
µA
–––
25
V
DS
= 24V,V
GS
= 0V,T
J
= 125°C
––– 100
V
GS
= 20V
nA
––– -100
V
GS
= -20V
22
2.6
6.8
3.7
7.3
21
11
755
310
120
33
3.9
10
–––
–––
–––
–––
–––
–––
–––
I
D
= 3.5A
nC
V
DS
= 15V
V
GS
= 10V
V
DD
= 15V
I
D
= 3.5A
ns
R
G
= 6.8
V
GS
= 10V
V
GS
= 0V
pF
V
DS
= 25V
ƒ = 1.0MHz
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 3.5A,V
GS
= 0V
ns T
J
= 25°C ,I
F
= 3.5A,
nC di/dt = 100A/µs
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Total Gate Charge
Q
g
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain Charge
t
d(on)
Turn-On Delay Time
Rise Time
t
r
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Typ. Max. Units
–––
–––
–––
27
43
3.0
58
1.0
40
65
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, Starting T
J
= 25°C, L = 76mH, R
G
= 50, I
AS
= 3.5A
V
GS
=10V. Part not recommended for use above this value.
SD
3.5A,
di/dt
590A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
I
Pulse width
400µs;
duty cycle
2%.
When mounted on 1 inch square copper board.
R
is measured at T
J
of approximately 90°C.
2
2015-9-30
100
TOP
VGS
15V
10V
7.0V
6.0V
4.5V
3.5V
3.0V
2.8V
AUIRF7313Q
100
60µs
PULSE WIDTH
Tj = 175°C
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
7.0V
6.0V
4.5V
3.5V
3.0V
2.8V
ID, Drain-to-Source Current (A)
10
BOTTOM
BOTTOM
10
1
2.8V
0.1
0.1
60µs
PULSE WIDTH Tj = 25°C
1
10
100
1
0.1
1
2.8V
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
100
Fig. 2
Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 6.9A
ID, Drain-to-Source Current (A)
VGS = 10V
10
T J = 175°C
1.5
1
T J = 25°C
1.0
VDS = 15V
60µs
PULSE WIDTH
0.1
1
2
3
4
5
6
7
0.5
-60
-20
20
60
100
140
180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + Cgd, C ds SHORTED
C rss = C gd
C oss = Cds + Cgd
Fig. 4
Normalized On-Resistance vs. Temperature
14.0
ID = 3.5A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
C, Capacitance (pF)
1000
Ciss
C oss
C rss
VDS = 24V
VDS = 15V
VDS= 6.0V
100
10
1
10
VDS , Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
30
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2015-9-30
100
AUIRF7313Q
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
1ms
10
10ms
100µs
10
T J = 175°C
1
T J = 25°C
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.10
1
10
100
0.1
VGS = 0V
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD , Source-to-Drain Voltage (V)
0.01
VDS, Drain-to-Source Voltage (V)
Fig. 7
Typical Source-to-Drain Diode Forward Voltage
7
6
ID, Drain Current (A)
Fig 8.
Maximum Safe Operating Area
2000
EAS , Single Pulse Avalanche Energy (mJ)
1600
5
4
3
2
1
0
25
50
75
100
125
150
175
T A , Ambient Temperature (°C)
ID
TOP
1.0A
1.6A
BOTTOM 3.5A
1200
800
400
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs. Case Temperature
100
Thermal Response ( Z thJA ) °C/W
Fig 10.
Maximum Avalanche Energy vs. Drain Current
10
1
0.1
0.01
0.001
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
0.01
0.1
1
10
100
0.0001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
2015-9-30
AUIRF7313Q
RDS ( on) , Drain-to-Source On Resistance (
m)
RDS(on), Drain-to -Source On Resistance ( m)
80
70
70
ID = 3.5A
60
VGS= 4.5V
60
50
40
30
20
10
0
10
20
30
40
50
60
50
40
30
T J = 125°C
20
VGS= 10V
T J = 25°C
10
0
4
8
12
16
20
ID , Drain Current (A)
VGS, Gate-to-Source Voltage (V)
Fig 12.
Typical On-Resistance Vs. Drain
Current
Fig 13.
Typical On-Resistance Vs. Gate
Voltage
5
2015-9-30
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