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MIC4422YM-TR

Description
Gate Drivers
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size235KB,12 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance
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MIC4422YM-TR Overview

Gate Drivers

MIC4422YM-TR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrochip
package instructionSOP,
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time7 weeks
high side driverNO
Interface integrated circuit typeBUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 codeR-PDSO-G8
JESD-609 codee4
length4.9 mm
Humidity sensitivity level3
Number of functions1
Number of terminals8
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Nominal output peak current9 A
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.879 mm
Maximum supply voltage18 V
Minimum supply voltage4.5 V
Nominal supply voltage18 V
surface mountYES
technologyBCDMOS
Temperature levelINDUSTRIAL
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
Disconnect time0.08 µs
connection time0.08 µs
width3.9 mm
MIC4421/4422
Micrel, Inc.
MIC4421/4422
9A-Peak Low-Side MOSFET Driver
Bipolar/CMOS/DMOS
Process
General Description
MIC4421 and MIC4422 MOSFET drivers are rugged, ef-
ficient, and easy to use. The MIC4421 is an inverting driver,
while the MIC4422 is a non-inverting driver.
Both versions are capable of 9A (peak) output and can drive
the largest MOSFETs with an improved safe operating mar-
gin. The MIC4421/4422 accepts any logic input from 2.4V to
V
S
without external speed-up capacitors or resistor networks.
Proprietary circuits allow the input to swing negative by as
much as 5V without damaging the part. Additional circuits
protect against damage from electrostatic discharge.
MIC4421/4422 drivers can replace three or more discrete
components, reducing PCB area requirements, simplifying
product design, and reducing assembly cost.
Modern Bipolar/CMOS/DMOS construction guarantees
freedom from latch-up. The rail-to-rail swing capability of
CMOS/DMOS insures adequate gate voltage to the MOS-
FET during power up/down sequencing. Since these devices
are fabricated on a self-aligned process, they have very low
crossover current, run cool, use little power, and are easy
to drive.
Features
• BiCMOS/DMOS Construction
• Latch-Up Proof: Fully Isolated Process is Inherently
Immune to Any Latch-up.
• Input Will Withstand Negative Swing of Up to 5V
• Matched Rise and Fall Times ............................... 25ns
• High Peak Output Current ...............................9A Peak
• Wide Operating Range .............................. 4.5V to 18V
• High Capacitive Load Drive ........................... 47,000pF
• Low Delay Time .............................................30ns Typ.
• Logic High Input for Any Voltage from 2.4V to V
S
• Low Equivalent Input Capacitance (typ) ................. 7pF
• Low Supply Current .............. 450µA With Logic 1 Input
• Low Output Impedance .........................................1.5Ω
• Output Voltage Swing to Within 25mV of GND or V
S
Applications
Switch Mode Power Supplies
Motor Controls
Pulse Transformer Driver
Class-D Switching Amplifiers
Line Drivers
Driving MOSFET or IGBT Parallel Chip Modules
Local Power ON/OFF Switch
Pulse Generators
Functional Diagram
V
S
0.1mA
0.3mA
MIC4421
IN V E R T I N G
OUT
IN
2kΩ
MIC4422
NONINVERTING
GND
Micrel, Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 (408) 944-0800 • fax + 1 (408) 474-1000 • http://www.micrel.com
August 2005
1
M9999-081005

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