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10JDA40

Description
DIODE - 1A 400V TJ = 150C
CategoryDiscrete semiconductor    diode   
File Size34KB,5 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
Download Datasheet Parametric View All

10JDA40 Overview

DIODE - 1A 400V TJ = 150C

10JDA40 Parametric

Parameter NameAttribute value
MakerNihon Inter Electronics Corporation
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-XALF-W2
Maximum non-repetitive peak forward current45 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current1 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
½
DIODE
FEATURES
Type :
10JDA40
1A 400V Tj =150
°
C
OUTLINE DRAWING
* Miniature Size
* Low Forward Voltage drop
* Low Reverse Leakage Current
* High Surge Capability
* 26mm and 52mm Inside Tape Spacing Package
Available
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Symbol
V
RRM
I
O
I
F(RMS)
I
FSM
T
jw
T
stg
Approx Net Weight:0.21g
10JDA40
400
50Hz
Ta=29°C *1
Half Sine Wave
Tl=126°C
Resistive Load (Tl: Lead Temperature)
50Hz Half Sine Wave,1cycle,
Non-repetitive
- 40 to + 150
- 40 to + 150
1.0
1.0
1.57
45
A
A
A
°C
°C
Unit
V
Electrical
Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Symbol
Conditions
Tj= 25°C, V
RM
= V
RRM
Tj= 25°C, I
FM
= 1.0A
Junction to Ambient *1
Junction to Lead
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
10
1.0
120
23
Unit
µA
V
°C/W
I
RM
V
FM
Rth(j-a)
Thermal Resistance
Rth(j-l)
*1: Without Fin or P.C. Board mounted

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