datasheet
EEWORLDEEWORLDEEWORLD
Datasheet
Part Number

Keyword

Search
Keyword

Part Number

Search
Datasheet> All Categories > Discrete semiconductor> The transistor> DMN5L06DMK-7
PDF
Preview

DMN5L06DMK-7

Description
MOSFET Dual N-Channel
CategoryDiscrete semiconductor    The transistor   
File Size220KB，4 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
Download Datasheet Parametric View All

DMN5L06DMK-7 Online Shopping

Suppliers Part Number Price MOQ In stock  
DMN5L06DMK-7 - - View Buy Now

DMN5L06DMK-7 Overview

MOSFET Dual N-Channel

DMN5L06DMK-7 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDiodes Incorporated
package instructionGREEN, PLASTIC PACKAGE-6
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time15 weeks
Other featuresHIGH RELIABILITY
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (Abs) (ID)0.305 A
Maximum drain current (ID)0.305 A
Maximum drain-source on-resistance3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)5 pF
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.4 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON

Preview

Download Datasheet
DMN5L06DMK
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
•
•
•
•
•
•
•
•
•
•
•
Dual N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage (1.0V max)
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected up to 2kV
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
•
•
•
•
•
•
•
•
Case: SOT-26
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.015 grams (approximate)
NEW PRODUCT
SOT-26
D
2
G
1
S
1
ESD protected up 2kV
S
2
G
2
D
1
TOP VIEW
BOTTOM VIEW
TOP VIEW
Internal Schematic
Maximum Ratings
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
@T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
GSS
Continuous
Pulsed (Note 3)
I
D
Value
50
±20
305
800
Unit
V
V
mA
Characteristic
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
P
D
R
θ
JA
T
j
, T
STG
Value
400
313
-65 to +150
Unit
mW
°C/W
°C
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
1.
2.
3.
4.
5.
@T
A
= 25°C unless otherwise specified
Symbol
BV
DSS
I
DSS
I
GSS
Min
50
⎯
⎯
Typ
⎯
⎯
⎯
Max
⎯
60
1
500
50
1.0
3.0
2.5
2.0
⎯
⎯
1.4
50
25
5.0
Unit
V
nA
μA
nA
nA
V
Ω
A
mS
V
pF
pF
pF
Test Condition
V
GS
= 0V, I
D
= 10μA
V
DS
= 50V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
V
GS
= ±10V, V
DS
= 0V
V
GS
= ±5V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 1.8V, I
D
= 50mA
V
GS
= 2.5V, I
D
= 50mA
V
GS
= 5.0V, I
D
= 50mA
V
GS
= 10V, V
DS
= 7.5V
V
DS
=10V, I
D
= 0.2A
V
GS
= 0V, I
S
= 115mA
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
@ T
C
= 25°C
V
GS(th)
R
DS (ON)
I
D(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
0.49
⎯
⎯
⎯
0.5
200
0.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.4
⎯
⎯
⎯
⎯
⎯
Device mounted on FR-4 PCB.
No purposefully added lead.
Pulse width
≤10μS,
Duty Cycle
≤1%.
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Short duration pulse test used to minimize self-heating effect.
DMN5L06DMK
Document number: DS30927 Rev. 4 - 2
1 of 4
www.diodes.com
September 2007
© Diodes Incorporated

Recommended Resources

Circuit a for controlling three electrical appliances with a single wire

RTS998 (8-tone) circuit

μPC1278H power amplifier circuit diagram

TDA2008 power amplifier circuit diagram

JDW91-10 type external positioning punching machine electrical box panel wiring diagram

Pocket coin validator circuit

Shortcut:   00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

Popular Components

  1. 660-032M25F6-72
  2. 637P12506C2T
  3. BD533-6261
  4. OC-160-AAD-508DA-10MHZ
  5. CEC12CS8330PF2%100V
  6. MTMS-124-54-G-D-002-001
  7. RHC1210K8873FC
  8. R35I-200/2-4MM-LD/PP-5/0-8-A-H
  9. GBPC1501W
  10. GDZJ24D-35_AY_10001
  11. A2550HD-5P-G
  12. MB10M

Popular Articles

  1. MARSHALL releases two true wireless earphones
  2. Intel reflects on Vietnam's escalation of lockdown: impact on production expansion
  3. ON Semiconductor to host a series of power webcasts to address power efficiency design challenges
  4. Yangzhou Jingxin Microelectronics' 6-inch chip factory is now online
  5. 51 single chip microcomputer realizes the program of iPhone 4S power-on password lock in digital tube
  6. xMEMS launches Montara Pro micro speaker with integrated DynamicVent
  7. How to implement Ethernet communication and ModbusTCP configuration through CHNet-S7200PD
  8. Using a separate keyboard
  9. 6.5-digit digital multimeter explained
  10. ROHM's SiC MOSFETs and SiC SBDs are successfully used in Apex Microtechnology's industrial equipment power module series

Technical ResourceMore

  1. Huawei\'s internal hardware development and design process
  2. Communication circuit between refrigerator main control and display board
  3. RPi_Pi Pico_Digital Edition RP2040_MicroPython_Development Getting Started
  4. Xiaomi 2S point map
  5. IPAD2 MLB pin point location map.pdf
  6. Xiaomi 3 point map
  7. pcb2D3D Library
  8. EMI Simulation 2
  9. BhaskarMitra
  10. SI - Ethernet

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

About Us Customer Service Contact Information Datasheet Sitemap LatestNews
Index Files: 2617  765  371  1706  856  53  16  8  35  18 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号