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BAS385-TR

Description
Schottky Diodes & Rectifiers 30 Volt 200mA 300mA IFSM
Categorysemiconductor    Discrete semiconductor   
File Size86KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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BAS385-TR Overview

Schottky Diodes & Rectifiers 30 Volt 200mA 300mA IFSM

BAS385-TR Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerVishay
Product CategorySchottky Diodes & Rectifiers
RoHSDetails
ProductSchottky Diodes
Mounting StyleSMD/SMT
Package / CaseMicro MELF
If - Forward Current0.2 A
Vrrm - Repetitive Reverse Voltage30 V
Vf - Forward Voltage0.8 V
Ifsm - Forward Surge Current5 A
ConfigurationSingle
TechnologySi
Ir - Reverse Current2.3 uA
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 125 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height1.15 mm
Length1.9 mm
Operating Temperature Range+ 125 C
TypeSmall Signal Schottky Diode
Width1.15 mm
Factory Pack Quantity2500
Unit Weight0.000423 oz
BAS385
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diode
FEATURES
• Integrated
discharge
protection
ring
against
static
• Very low forward voltage
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
APPLICATIONS
• Applications where a very low forward voltage is required
MECHANICAL DATA
Case:
MicroMELF
Weight:
approx. 12 mg
Cathode band color:
black
Packaging codes/options:
TR3/10K per 13" reel (8 mm tape), 10K/box
TR/2.5K per 7" reel (8 mm tape), 12.5K/box
PARTS TABLE
PART
BAS385
TYPE DIFFERENTIATION
V
R
= 30 V
ORDERING CODE
BAS385-TR3 or BAS385-TR
CIRCUIT CONFIGURATION
Single
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward continuous current
Average forward current
V
RWM
= 25 V
t
p
= 10 ms
t
p
1 s
TEST CONDITION
SYMBOL
V
R
I
FSM
I
FRM
I
F
I
FAV
VALUE
30
5
300
200
200
UNIT
V
A
mA
mA
mA
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
On PC board
50 mm x 50 mm x 1.6 mm
SYMBOL
R
thJA
T
j
T
stg
VALUE
320
125
-65 to +150
UNIT
K/W
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
I
F
= 0.1mA
I
F
= 1 mA
Forward voltage
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
Reserve current
Diode capacitance
V
R
= 25 V, t
p
= 300 μs
V
R
= 1 V, f = 1 MHz
SYMBOL
V
F
V
F
V
F
V
F
V
F
I
R
C
D
MIN.
TYP.
MAX.
240
320
400
500
800
2.3
10
UNIT
mV
mV
mV
mV
mV
μA
pF
Rev. 2.2, 02-Jun-17
Document Number: 85504
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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