Product Brief
BGA734L16
Highly Integrated Tri-Band Low Noise Amplifier
for UMTS and HSxPA Systems
T h e B G A 7 3 4 L 1 6 is a highly integrated Low Noise Amplifier for 3G low,
mid, and high bands. Designed using a proprietary Silicon Germanium Carbon
process, the BGA734L16 delivers outstanding RF performance while optimizing cost,
battery life, and size.
High Level of Integration
In order to reduce front-end design complexity and minimize cost, the BGA734L16
monolithically integrates three amplifiers for cellular bands 800 Mhz, 1900 Mhz,
and 2100 Mhz on one die. Additional functions, including temperature stabilizing
block, 1kV hBM eSD protection, and output matching network are also integrated on
chip.
Battery Life Optimized
The BGA734L16 offers gain control capability for improving the dynamic range and
system performance in presence of high levels of interferers. Controlling the gain of
the LNA has also the advantage of extending battery life.
Small Form Factor
The BGA734L16 comes in a low profile, Tiny and Small Leadless Package code-
named TSLP-16. The package measures 2.3 x 2.3 x 0.39 mm
3
making this device
ideal for low profile multi-media phones and highly integrated front end modules.
Applications
■
■
■
handset
Data-Card
Module
Features
■
■
■
■
■
■
Internally matched output to 50
W
SiGe:C process
Shut down mode
Temperature stabilization
Two gain modes
Low external part count
Benefits
■
■
■
■
■
high level of integration
high linearity
Ultra-low noise figure
Small form factor
Low cost
TSLP-16 Package
2.3 x 2.3 x 0.39 mm
3
www.infineon.com/smallsignaldiscretes
Small Signal Discretes
Product Brief
Application Circuit
V
CC
= 2.8 V
C
7
0
GND
5 RFGNDH
10 nF 3
4
RFGNDH
V
CC
2
V
GS
V
GS
= 0/2.8 V
1
N.C.
RFIN
1900 MHz
C
1
10 pF
L
1
3.9 nH
C
2
1 nF
L
2
2.7 nH
6 RFINM
RFOUTM 16
RFOUT
1900 MHz
RFIN
2100 MHz
C
3
10 pF
C
4
1 nF
7 RFINH
RFOUTH 15
RFOUT
2100 MHz
8 RFGNDM
Biasing & Logic
Circuitry
9 RFGNDM
C
5
3 pF
C
6
1 nF
L
3
7.5 nH
RFINL
10
V
EN2
11
V
EN
= 0/2.8 V
RFOUTL 14
RFOUT
800 MHz
13
V
EN1
12
V
EN
= 0/2.8 V
N.C.
RFIN
800 MHz
High Gain Mode Performance
Supply Voltage: 2.8 V, Supply Current: 3.5 mA
Band [MHz]
800
1900
2100
Gain [dB]
14.5
15
15
Noise Figure [dB]
1.3
1.2
1.2
IP1dB [dB]
-15
-14
-14
IIP3 in Band [dB]
+1
-1
-1
Low Gain Mode Performance
Supply Voltage: 2.8 V, Supply Current: 0.5 mA
Band [MHz]
800
1900
2100
Gain [dB]
-8
-8
-8
Noise Figure [dB]
9
8.5
9
IP1dB [dB]
-7
-7
-7
IIP3 in Band [dB]
+1
+4
-1
how to reach us:
http://www.infineon.com
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Legal Disclaimer
The information given in this Product Brief shall in no event be
regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples or hints
given herein, any typical values stated herein and/or any informa-
tion regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind,
including without limitation warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-
support devices or systems with the express written approval
of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in
the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume
that the health of the user or other persons may be endangered.
Ordering No. B132-h8883-X-X-7600
Printed in Germany
PS 0107.5 nb
Published by Infineon Technologies AG
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