BD249C
NPN High−Power Transistor
NPN high−power transistors are for general−purpose power
amplifier and switching applications.
Features
•
ESD Ratings:
Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
•
Epoxy Meets UL 94 V−0 @ 0.125
•
Pb−Free Package is Available*
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25 AMP, 100 VOLT, 125 WATT
NPN SILICON
POWER TRANSISTOR
MAXIMUM RATINGS
Rating
Collector
−
Emitter Voltage
Collector
−
Base Voltage
Emitter
−
Base Voltage
Collector Current
−
Continuous
Peak (Note 1)
Base Current
−
Continuous
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Unclamped Inductive Load
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
100
100
5.0
25
40
5.0
125
1.0
– 65 to +150
90
Unit
Vdc
Vdc
Vdc
Adc
Apk
Adc
W
W/°C
°C
mJ
1
2
3
TO−218
CASE 340D
STYLE 1
I
B
P
D
T
J
, T
stg
E
SB
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Thermal Resistance,
Junction−to−Ambient
Symbol
R
qJC
R
qJA
Max
1.0
35.7
Unit
°C/W
°C/W
AYWWG
BD249C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
BD249C
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
BD249C
BD249CG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Package
TO−218
TO−218
(Pb−Free)
Shipping
30 Units/Rail
30 Units/Rail
©
Semiconductor Components Industries, LLC, 2006
August, 2006
−
Rev. 2
1
Publication Order Number:
BD249C/D
BD249C
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 30 mA, I
B
= 0)
Collector−Emitter Cutoff Current
(V
CE
= 60 V, I
B
= 0)
Collector−Emitter Cutoff Current
(V
CE
= Rated V
CEO
, V
EB
= 0)
Emitter−Base Cutoff Current
(V
EB
= 5.0 V, I
C
= 0)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 1.5 A, V
CE
= 4.0 V)
(I
C
= 15 A, V
CE
= 4.0 V)
(I
C
= 25 A, V
CE
= 4.0 V)
Collector−Emitter Saturation Voltage
(I
C
= 15 A, I
B
= 1.5 A)
(I
C
= 25 A, I
B
= 5.0 A)
Base−Emitter On Voltage
(I
C
= 15 A, V
CE
= 4.0 V)
(I
C
= 25 A, V
CE
= 4.0 V)
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain
(I
C
= 1.0 A, V
CE
= 10 V, f = 1.0 kHz)
Current−Gain — Bandwidth Product
(I
C
= 1.0 A, V
CE
= 10 V, f = 1.0 MHz)
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
h
fe
f
T
25
3.0
−
−
−
MHz
h
FE
25
10
5.0
V
CE(sat)
−
−
V
BE(on)
−
−
2.0
4.0
1.8
4.0
V
−
−
−
V
−
V
CEO(sus)
I
CEO
I
CES
I
EBO
100
−
−
−
−
1.0
0.7
1.0
V
mA
mA
mA
Symbol
Min
Max
Unit
125
PD, POWER DISSIPATION (WATTS)
100
75
50
25
0
0
25
50
75
125
100
T
C
, CASE TEMPERATURE (°C)
150
175
Figure 1. Power Derating
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2
BD249C
TURN−ON TIME
+2.0 V
0
t
r
≤
20 ns
−11.0 V
V
CC
R
L
10
R
B
10 TO 100
mS
DUTY CYCLE
≈
2.0%
V
CC
+9.0 V
0
−11.0 V
t
r
≤
20 ns
V
BB
+4.0 V
10
R
B
10 to 100
ms
DUTY CYCLE
≈
2.0%
R
L
−30 V
t, TIME (
μ
s)
3.0
TO SCOPE
t
r
≤
20 ns
−30 V
3.0
TO SCOPE
t
r
≤
20 ns
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.3
t
d
(PNP)
(NPN)
t
r
T
J
= 25°C
I
C
/I
B
= 10
V
CC
= 30 V
V
BE(off)
= 2 V
TURN−OFF TIME
FOR CURVES OF FIGURES 3 & 4, R
B
& R
L
ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN, REVERSE ALL POLARITIES.
0.5 0.7 1.0
5.0 7.0 10
2.0 3.0
I
C
, COLLECTOR CURRENT (AMPERES)
20
30
Figure 2. Switching Time Equivalent Test Circuits
Figure 3. Turn−On Time
10
7.0
5.0
3.0
t, TIME (
μ
s)
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.3 0.5 0.7
1000
(PNP)
(NPN)
t
s
T
J
= 25°C
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
500
200
hFE , DC CURRENT GAIN
100
50
20
10
5.0
2.0
1.0
2.0 3.0
5.0 7.0 10
I
C
, COLLECTOR CURRENT (AMPERES)
20
30
1.0
0.1
0.2
0.5 1.0
2.0
5.0 10
20
I
C
, COLLECTOR CURRENT (AMPS)
50
100
PNP
NPN
V
CE
= 4.0 V
T
J
= 25°C
t
s
t
f
t
f
Figure 4. Turn−Off Time
Figure 5. DC Current Gain
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3
BD249C
FORWARD BIAS
100
IC, COLLECTOR CURRENT (AMPS)
50
30
20
10
10 ms
dc
SECONDARY BREAKDOWN
THERMAL LIMIT
BONDING WIRE LIMIT
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on T
C
= 25_C; T
J(pk)
is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when T
C
w
25_C. Second breakdown limitations do
not derate the same as thermal limitations.
REVERSE BIAS
300
ms
1.0 ms
T
C
= 25°C
5.0
2.0
1.0
0.5
0.3
0.2
0
1.0
IC, COLLECTOR CURRENT (AMPS)
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 7 gives RBSOA characteristics.
20 30
50 70 100
2.0 3.0
5.0 7.0 10
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 6. Maximum Rated Forward Bias
Safe Operating Area
40
30
25
20
15
10
T
J
≤
100°C
5.0
0
0
10
40
60
80
20
30
50
70
90
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
100
Figure 7. Maximum Rated Forward Bias
Safe Operating Area
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4
BD249C
TEST CIRCUIT
V
CE
MONITOR
MJE180
INPUT
50
R
BB1
20
L1
(SEE NOTE A)
TUT
L2
(SEE NOTE A)
50
R
BB2
= 100
V
CC
= 10 V
−
+
I
C
MONITOR
V
BB2
= 0
−
V
BB1
= 10 V
+
R
S
= 0.1
W
VOLTAGE AND CURRENT WAVEFORMS
t
w
= 6.0 ms
(SEE NOTE B)
5.0 V
INPUT
VOLTAGE
0
100 ms
COLLECTOR
CURRENT
0
−3.0 A
0
−10 V
COLLECTOR
VOLTAGE
V
(BR)CER
NOTES:
A. L1 and L2 are 10 mH, 0.11
W,
Chicago Standard Transformer Corporation C−2688, or equivalent.
B. Input pulse width is increased until I
CM
=
−
3.0 A.
C. For NPN, reverse all polarities.
Figure 8. Inductive Load Switching
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