product family. Using the ultra-high density propri-
etary TrenchDMOS technology, the product
demonstrates high power handling and small size.
AAT7103
Features
•
•
•
V
DS(MAX)
= 25V
I
D(MAX)
(1)
= 6.8 A @ 25°C
Low R
DS(ON)
:
• 26 mΩ @V
GS
= 4.5V
• 41 mΩ @V
GS
= 2.5V
Applications
•
•
•
Battery Packs
Cellular & Cordless Telephones
PDAs, Camcorders, and Cell Phones
Dual SOP-8 Package
Preliminary Information
Top View
D1
8
D1
7
D2
6
D2
5
1
S1
2
G1
3
S2
4
G2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
(T
A
=25°C unless otherwise noted)
Value
25
±12
±6.8
±5.4
±24
1.8
2.0
1.25
-55 to 150
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
=150°C
1
Units
V
T
A
= 25°C
T
A
= 70°C
Pulsed Drain Current
3
Continuous Source Current (Source-Drain Diode)
1
T
A
= 25°C
Maximum Power Dissipation
1
T
A
= 70°C
Operating Junction and Storage Temperature Range
A
W
°C
Thermal Characteristics
Symbol
R
θJA
R
θJA2
R
θJF
Description
Typical Junction-to-Ambient steady state, one FET on
Maximum Junction-to-Ambient Figure, t < 10 sec.
1
Typical Junction-to-Foot, one FET on
1
2
Value
100
62.5
35
Units
°C/W
°C/W
°C/W
7103.2003.04.0.61
1
25V N-Channel Power MOSFET
Electrical Characteristics
Symbol Description
DC Characteristics
BV
DSS
Drain-Source Breakdown Voltage
R
DS(ON)
I
D(ON)
AAT7103
(T
J
=25°C unless otherwise noted)
Conditions
V
GS
=0V, I
D
=250µA
V
GS
=4.5V, I
D
=6.8A
V
GS
=2.5V, I
D
=5.4A
V
GS
=4.5V ,V
DS
=5V (Pulsed)
V
GS
=V
DS
, I
D
=250µA
V
GS
= ±12V, V
DS
=0V
V
GS
=0V, V
DS
=25V
V
GS
=0V, V
DS
=20V, T
J
=70°C
V
DS
=5V, I
D
=6.8A
V
DS
=15V, R
D
=2.2Ω, V
GS
=4.5V
V
DS
=15V, R
D
=2.2Ω, V
GS
=4.5V
V
DS
=15V, R
D
=2.2Ω, V
GS
=4.5V
V
DD
=15V, V
GS
=10V, R
D
=2.2Ω, RG=6Ω
V
DD
=15V, V
GS
=10V, R
D
=2.2Ω, RG=6Ω
V
DD
=15V, V
GS
=10V, R
D
=2.2Ω, RG=6Ω
V
DD
=15V, V
GS
=10V, R
D
=2.2Ω, RG=6Ω
3
Min
25
Typ
Max
Units
V
Drain-Source ON-Resistance
On-State Drain Current
3
Gate Threshold Voltage
Gate-Body Leakage Current
3
19
28
24
0.6
26
41
mΩ
A
V
nA
µA
S
V
GS(th)
I
GSS
I
DSS
Drain Source Leakage Current
±100
1
5
20
13
1.9
2.9
15
18
36
27
19
g
fs
Forward Transconductance
3
Dynamic Characteristics
4
Q
G
Total Gate Charge
Q
GS
Gate-Source Charge
Q
GD
Gate-Drain Charge
t
D(ON)
Turn-ON Delay
t
R
Turn-ON Rise Time
t
D(OFF)
Turn-OFF Delay
t
F
Turn-OFF Fall Time
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward Voltage
I
S
Continuous Diode Current
1
nC
ns
V
GS
=0, I
S
=6.8A
1.5
1.8
V
A
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1” x 1” PCB with optimized layout. A 10 second pulse
on a 1” x 1” PCB approximates testing a device mounted on a large multi-layer PCB as in many applications. R
θJF
+ R
θFA
= R
θJA
where the foot thermal reference is defined as the normal solder mounting surface of the device’s leads. R
θJF
is guaranteed by
design; however, R
θFA
is determined by PCB design. Actual maximum continuous current is limited by the application’s design.
Note 2: Steady state thermal response while mounted on a 1” x 1” PCB with maximum copper area is provided for comparison with
other devices. This test condition approximates many battery pack applications.
Note 3: Pulsed measurement 300 µs, single pulse.
Note 4: Guaranteed by design. Not subject to production testing.
2
7103.2003.04.0.61
25V N-Channel Power MOSFET
Typical Characteristics
(T
J
= 25ºC unless otherwise noted)
Output Characteristics
32
AAT7103
Transfer Characteristics
32
5V
4.5V
24
4V
3.5V
3V
2.5V
V
D
=V
G
24
25°C
-55°C
I
DS
(A)
16
2V
I
D
(A)
125°C
16
8
8
1.5V
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
0
V
DS
(V)
V
GS
(V)
On-Resistance vs. Drain Current
60
50
On-Resistance vs. Gate to Source Voltage
60
I
D
= 5.5A
50
R
DS(ON)
(mΩ)
30
20
10
0
0
8
16
24
32
R
DS(ON)
(mΩ)
40
V
GS
= 2.5 V
40
30
20
10
0
0
1
2
3
4
5
V
GS
= 4.5 V
I
D
(A)
V
GS
(V)
Gate Charge
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
0.1
0
Source-Drain Diode Forward Voltage
100
V
D
=15V
I
D
=5.5A
I
S
(A)
10
V
GS
(V)
T
J
= 150°C
T
J
= 25°C
1
0.2
0.4
0.6
0.8
1
1.2
Q
G
, Charge (nC)
7103.2003.04.0.61
V
SD
(V)
3
25V N-Channel Power MOSFET
Ordering Information
Package
SOP-8
Marking
7103
Part Number (Tape and Reel)
AAT7103IAS-T1
AAT7103
Note: Sample stock is generally held on all part numbers listed in
BOLD.
Package Information
3.90
±
0.10
4.90
±
0.10
6.00
±
0.20
0.375
±
0.125
1.55
±
0.20
45°
0.175
±
0.075
4°
±
4°
0.235
±
0.045
0.825
±
0.445
0.42
±
0.09
×
8
1.27 BSC
All dimensions in millimeters.
AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work
rights, or other intellectual property rights are implied.
AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest
version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale
supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and
other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
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