30V N-Channel Power MOSFET
General Description
The AAT9060 30V N-Channel Power MOSFET is a
member of AnalogicTech™'s TrenchDMOS™
product family. Using the ultra-high density propri-
etary TrenchDMOS technology, this product
demonstrates high power handling and small size.
AAT9060
Features
•
•
•
•
PWMSwitch
™
V
DS(MAX)
= 30V
I
D(MAX)
1
= 39A @ T
C
= 25°C
I
APP(MAX)
= 12.5A in typical computer application
Low R
DS(ON)
:
• 16 mΩ @V
GS
= 10V
• 27 mΩ @V
GS
= 4.5V
Applications
•
•
•
DC-DC converters
High current load switches
LDO output
DPAK Package
Drain-Connected Tab
Preliminary Information
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
(T
C
=25°C unless otherwise noted)
Value
30
±20
±39
±31
±60
20
41
26
-55 to 150
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
=150°C
1
Units
V
T
C
= 25°C
T
C
= 70°C
Pulsed Drain Current
3
Continuous Source Current (Source-Drain Diode)
1
T
C
= 25°C
Maximum Power Dissipation
1
T
C
= 70°C
Operating Junction and Storage Temperature Range
A
W
°C
Thermal Characteristics
Symbol
R
θJA
R
TYP
R
θJC
Description
Maximum Junction-to-Ambient
Typical Junction to ambient on PC board
Maximum Junction-to-Case
2
Value
96
24
3
Units
°C/W
°C/W
°C/W
9060.2003.05.0.9
1
30V N-Channel Power MOSFET
Electrical Characteristics
Symbol
Description
(T
J
=25°C unless otherwise noted)
Conditions
V
GS
=0V, I
D
=250µA
V
GS
=10V, I
D
=25A
V
GS
=4.5V, I
D
=19A
V
GS
=10V, V
DS
=5V (Pulsed)
V
GS
=V
DS
, I
D
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
=0V, V
DS
=30V
V
GS
=0V, V
DS
=30V, T
J
=70°C
V
DS
=5V, I
D
=9A
AAT9060
Min
30
Typ
Max
Units
V
DC Characteristics
BV
DSS
Drain-Source Breakdown Voltage
R
DS(ON)
I
D(ON)
V
GS(th)
I
GSS
I
DSS
Drain-Source ON-Resistance
On-State Drain Current
3
Gate Threshold Voltage
Gate-Body Leakage Current
Drain Source Leakage Current
3
13
21
60
1.0
16
27
mΩ
A
V
nA
µA
S
4
±100
1
25
20
13
25
4
3.5
12
38
21
32
16
32
g
fs
Forward Transconductance
3
Dynamic Characteristics
4
Q
G
Total Gate Charge
Q
GT
Total Gate Charge
Q
GS
Gate-Source Charge
Q
GD
Gate-Drain Charge
t
D(ON)
Turn-ON Delay
t
R
Turn-ON Rise Time
t
D(OFF)
Turn-OFF Delay
t
F
Turn-OFF Fall Time
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward Voltage
I
S
Continuous Diode Current
1
Notes:
V
DS
=15V, R
D
=1.3Ω, V
GS
=5V
V
DS
=15V, R
D
=1.3Ω, V
GS
=10V
V
DS
=15V, R
D
=1.3Ω, V
GS
=10V
V
DS
=15V, R
D
=1.3Ω, V
GS
=10V
V
DD
=15V, R
D
=1.3Ω, V
GS
=10V,
V
DD
=15V, R
D
=1.3Ω, V
GS
=10V,
V
DD
=15V, R
D
=1.3Ω, V
GS
=10V,
V
DD
=15V, R
D
=1.3Ω, V
GS
=10V,
3
nC
R
G
=6Ω
R
G
=6Ω
R
G
=6Ω
R
G
=6Ω
ns
V
GS
=0, I
S
=20A
2
20
V
A
1. Based on thermal dissipation from junction to case. R
θJC
+ R
θCA
= R
θJA
where the case thermal reference is defined as the solder
mounting surface of the drain tab. R
θJC
is guaranteed by design, however R
θCA
is determined by the PCB design. Package current is
limited to 30A DC and 60A pulsed.
2. Mounted on typical computer main board.
3. Pulse measurement 300 µs.
4. Guaranteed by design. Not subject to production testing.
2
9060.2003.05.0.9
30V N-Channel Power MOSFET
Typical Characteristics
(T
J
= 25ºC unless otherwise noted)
Output Characteristics
60
50
40
AAT9060
Transfer Characteristics
60
10V
6V
5V
4.5V
4V
3.5V
3V
V
D
=V
G
-55°C
25°C
125°C
50
40
I
DS
(A)
I
D
(A)
30
20
10
0
0
0.5
1
1.5
2
2.5
3
30
20
10
0
0
1
2
3
4
5
6
V
DS
(V)
V
GS
(V)
On-Resistance vs. Drain Current
40
40
On-Resistance vs. Gate to Source Voltage
I
D
= 25A
30
30
R
DS(ON)
(mΩ)
Ω
R
DS(ON)
(mΩ)
Ω
V
GS
= 4.5V
20
20
10
10
V
GS
= 10V
0
0
10
20
30
40
50
60
0
2
4
6
8
10
0
I
D
(A)
V
GS
(V)
On-Resistance vs. Junction Temperature
1.6
1.4
1.2
1.0
0.8
0.6
-50
Threshold Voltage
0.4
0.2
0.0
-0.2
-0.4
-0.6
-0.8
Normalized R
DS(ON)
V
GS(th)
Variance (V)
V
GS
= 10 V
I
D
= 25A
I
D
= 250µA
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
T
J
(°C)
T
J
(ºC)
9060.2003.05.0.9
3
30V N-Channel Power MOSFET
Typical Characteristics
(T
J
= 25ºC unless otherwise noted)
Gate Charge
10
AAT9060
Source-Drain Diode Forward Voltage
100
8
V
D
= 15V
I
D
= 11.5A
T
J
= 150°C
10
V
GS
(V)
6
4
I
S
(A)
T
J
= 25°C
1
2
0.1
0
5
10
15
20
25
0
0.2
0.4
0.6
0.8
1
1.2
0
Q
g
, Charge (nC)
V
SD
(V)
Capacitance
1800
1500
1200
900
600
300
0
0
10
20
30
40
C
ISS
Capacitance (pF)
C
RSS
C
OSS
V
DS
(V)
4
9060.2003.05.0.9
30V N-Channel Power MOSFET
Ordering Information
Package
TO-252 (DPAK)
Marking
9060
Part Number (Tape and Reel)
AAT9060INY-T1
AAT9060
Note: Sample stock is generally held on all part numbers listed in
BOLD.
Package Information
TO-252 (DPAK)
6.54
±
0.19
5.205
±
0.255
9.855
±
0.555
5.775
±
0.445
1.46
±
0.57
7.5°
±
7.5°
2.285
±
0.105
0.83
±
0.19
2.67 REF
2.29 BSC
1.145
0.72
±
0.17
0.58
±
0.13
0.13
1.59
±
0.19
All dimensions in millimeters.
0.50
9060.2003.05.0.9
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