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MBRT600100R

Description
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 3TWR 20-100V 600A100P/70R
Categorysemiconductor    Discrete semiconductor   
File Size450KB,4 Pages
ManufacturerGeneSiC Semiconductor
Environmental Compliance
Download Datasheet Parametric Compare View All

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MBRT600100R Overview

Schottky Diodes & Rectifiers SI PWR SCHOTTKY 3TWR 20-100V 600A100P/70R

MBRT600100R Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerGeneSiC Semiconductor
Product CategorySchottky Diodes & Rectifiers
RoHSDetails
ProductSchottky Diodes
Mounting StyleSMD/SMT
Package / CaseModule
If - Forward Current600 A
Vrrm - Repetitive Reverse Voltage100 V
Vf - Forward Voltage0.88 V
Ifsm - Forward Surge Current4000 A
TechnologySi
Ir - Reverse Current1 uA
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
PackagingBulk
Operating Temperature Range- 40 C to + 150 C
Factory Pack Quantity25
MBRT60045 thru MBRT600100R
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V V
RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Three Tower Package
V
RRM
= 45 V - 100 V
I
F(AV)
= 600 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MBRT60045(R) MBRT60060(R) MBRT60080(R) MBRT600100(R) Unit
45
32
45
-55 to 150
-55 to 150
60
42
60
-55 to 150
-55 to 150
80
56
80
-55 to 150
-55 to 150
100
70
100
-55 to 150
-55 to 150
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current (per
pkg)
Peak forward surge current
(per leg)
Maximum instantaneous
forward voltage (per leg)
Maximum Instantaneous
reverse current at rated DC
blocking voltage (per leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
Conditions
T
C
=125 °C
t
p
= 8.3 ms, half sine
I
FM
= 300 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 100 °C
T
j
= 150 °C
MBRT60045(R) MBRT60060(R) MBRT60080(R) MBRT600100(R) Unit
600
4000
0.75
1
10
50
0.28
600
4000
0.80
1
10
50
0.28
600
4000
0.84
1
10
50
0.28
600
4000
0.84
1
10
50
0.28
A
A
V
mA
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
R
ΘJC
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1

MBRT600100R Related Products

MBRT600100R MBRT60045R MBRT60080R MBRT60045
Description Schottky Diodes & Rectifiers SI PWR SCHOTTKY 3TWR 20-100V 600A100P/70R Schottky Diodes & Rectifiers SI PWR SCHOTTKY 3TWR 20-100V 600A 45P/32R Schottky Diodes & Rectifiers SI PWR SCHOTTKY 3TWR 20-100V 600A 80P57RV Schottky Diodes & Rectifiers SI PWR SCHOTTKY 3TWR 20-100V 600A 45P/32R
Product Attribute Attribute Value Attribute Value Attribute Value Attribute Value
Manufacturer GeneSiC Semiconductor GeneSiC Semiconductor GeneSiC Semiconductor GeneSiC Semiconductor
Product Category Schottky Diodes & Rectifiers Schottky Diodes & Rectifiers Schottky Diodes & Rectifiers Schottky Diodes & Rectifiers
RoHS Details Details Details Details
Technology Si Si Si Si
Packaging Bulk Bulk Bulk Bulk
Factory Pack Quantity 25 25 25 25
Product Schottky Diodes Schottky Diodes - Schottky Diodes
Mounting Style SMD/SMT SMD/SMT - SMD/SMT
Package / Case Module Module - Module
If - Forward Current 600 A 600 A - 600 A
Vrrm - Repetitive Reverse Voltage 100 V 45 V - 45 V
Vf - Forward Voltage 0.88 V 0.75 V - 0.75 V
Ifsm - Forward Surge Current 4000 A 4000 A - 4000 A
Ir - Reverse Current 1 uA 1 uA - 1 uA
Minimum Operating Temperature - 40 C - 40 C - - 40 C
Maximum Operating Temperature + 150 C + 150 C - + 150 C
Operating Temperature Range - 40 C to + 150 C - 40 C to + 150 C - - 40 C to + 150 C
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