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DB5S308K0R

Description
Schottky Diodes & Rectifiers SCHOTTKY BARRIER FLT LD 1.6x1.6mm
CategoryDiscrete semiconductor    diode   
File Size493KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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DB5S308K0R Overview

Schottky Diodes & Rectifiers SCHOTTKY BARRIER FLT LD 1.6x1.6mm

DB5S308K0R Parametric

Parameter NameAttribute value
package instructionR-PDSO-F5
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.29 V
frequency bandVERY HIGH FREQUENCY
JESD-30 codeR-PDSO-F5
Number of components2
Number of terminals5
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage30 V
Maximum reverse current120 µA
Reverse test voltage30 V
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
DB5S308K
Silicon epitaxial planar type
For high speed switching circuits
Features
Short reverse recovery time t
rr
Low forward voltage V
F
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: 3A
Basic Part Number
Dual DB2S308 (Parallel)
Packaging
DB5S308K0R Embossed type (Thermo-compression sealing): 8 000 pcs / reel (standard)
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Peak forward current
Non-repetitive peak forward
surge current
*2
Junction temperature
Operating ambient temperature
Storage temperature
Single
Double
*1
Single
Double
*1
Single
Double
*1
Symbol
V
R
V
RRM
I
F(AV)
I
FM
I
FSM
T
j
T
opr
T
stg
Rating
30
30
100
75
300
225
1
0.75
125
–40 to +85
–55 to +125
Unit
V
V
mA
mA
mA
mA
A
A
°C
°C
°C
1
2
3
5
4
Absolute Maximum Ratings
T
a
= 25°C
1: Anode-1
2: N.C.
3: Anode-2
Panasonic
JEITA
Code
4: Cathode-2
5: Cathode-1
SSMini5-F4-B
SC-107BB
SOT-665
Note) *1: Value of each diode in double diodes used.
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*1
Symbol
V
F1
V
F2
I
R1
I
R2
C
t
t
rr
I
F
= 10 mA
I
F
= 100 mA
V
R
= 10 V
V
R
= 30 V
V
R
= 10 V, f = 1 MHz
I
F
= I
R
= 100 mA, I
rr
= 10 mA
,
R
L
= 100
2.9
1.3
Conditions
Min
Typ
Max
0.29
0.42
25
120
Unit
V
µA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
4. *1: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
Output Pulse
t
I
F
t
rr
t
I
rr
= 10 mA
A
V
R
Wave Form Analyzer
(SAS-8130)
R
i
= 50
90%
t
p
= 2
µs
t
r
= 0.35 ns
δ
= 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100
Pulse Generator
(PG-10N)
R
s
= 50
Publication date: April 2013
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