These miniature surface mount MOSFETs utilize High
Cell Density process. Low r
DS(on)
assures minimal
power loss and conserves energy, making this device
ideal for use in power management circuitry. Typical
applications are PWMDC-DC converters, power
management in portable and battery-powered
products such as computers, printers, battery charger,
telecommunication power system, and telephones
power system.
Product Summary
V
DS
(V)
30
-30
r
DS(on)
(mΩ)
40@V
GS
=4.5V
28@V
GS
=10V
80@V
GS
=-4.5V
52@V
GS
=-10V
I
D
(A)
6.0
7.0
-4.0
-5.2
Pin Assignments
S1
G1
S2
G2
1
2
3
4
8
7
6
5
Pin Descriptions
D1
D1
D2
D2
Pin Name
S1
G1
D1
S2
G2
D2
Description
Source (NMOS)
Gate (NMOS)
Drain (NMOS)
Source (PMOS)
Gate (PMOS)
Drain (PMOS)
SOP-8
Ordering information
A X
Feature
F :MOSFET
PN
4512C X X X
Package
S: SOP-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Jul 20, 2004
1/8
AF4512C
P & N-Channel 30-V (D-S) MOSFET
Absolute Maximum Ratings
(T
A
=25ºC unless otherwise noted)
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
N-Channel
Drain-Source Voltage
30
Gate-Source Voltage
20
T
A
=25ºC
7
Continuous Drain Current
(Note 1)
T
A
=70ºC
5.6
Pulsed Drain Current
(Note 2)
20
Continuous Source Current (Diode Conduction)
(Note 1)
1.3
T
A
=25ºC
2.1
Power Dissipation
(Note 1)
1.3
T
A
=70ºC
Operating Junction and Storage Temperature Range
-
Parameter
P-Channel
-30
-20
-5.2
-6.8
-20
-1.3
2.1
1.3
-55 to 150
Units
V
A
A
A
W
ºC
Thermal Resistance Ratings
Symbol
R
θJC
R
θJA
Parameter
Maximum Junction-to-Case
(Note 1)
Maximum Junction-to-Ambient
(Note 1)
t
<
5 sec
t
<
5 sec
Maximum
40
60
Units
ºC/W
ºC/W
Note 1:
surface Mounted on 1”x 1” FR4 Board.
Note 2:
Pulse width limited by maximum junction temperature
Specifications
(T
A
=25ºC unless otherwise noted)
Symbol
Static
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
Drain-Source breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
(Note 3)
Drain-Source On-Resistance
(Note 3)
Parameter
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=0V, I
D
=-250uA
V
DS
= V
GS
, I
D
=250uA
V
DS
= V
GS
, I
D
=-250uA
V
GS
=20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
V
DS
=24V, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
DS
=5V, V
GS
=10V
V
DS
=-5V, V
GS
=-10V
V
GS
=10V, I
D
=7A
V
GS
=4.5V, I
D
=6A
V
GS
=-10V, I
D
=-5A
V
GS
=-4.5V, I
D
=-4A
V
DS
=15V, I
D
=7A
V
DS
=-15V, I
D
=-5A
Ch
N
P
N
P
N
P
N
P
N
P
N
P
N
P
Limits
Min.
Typ.
30
-30
1
-1.0
-
-
-
-
20
-20
-
-
-
-
-
-
-
-
1.95
-1.7
-
-
-
-
-
-
19
24
42
65
25
10
Max.
-
-
3
-3
±100
±100
1
-1
-
-
28
40
52
80
-
-
Unit
V
V
nA
uA
A
mΩ
Forward Tranconductance
(Note 3)
S
Anachip Corp.
www.anachip.com.tw
2/8
Rev. 1.1 Jul 20, 2004
AF4512C
P & N-Channel 30-V (D-S) MOSFET
Specifications
(T
A
=25ºC unless otherwise noted)
Symbol
Dynamic
Q
g
Q
gs
Q
gd
Switching
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
N-Channel
V
DD
=15, V
GS
=10V
I
D
=1A, R
GEN
=6Ω
P-Channel
V
DD
=-15, V
GS
=-10V
I
D
=-1A, R
GEN
=6Ω
N
P
N
P
N
P
N
P
-
-
-
-
-
-
-
8
7
5
13
23
14
3
9
16
14
10
24
37
25
6
17
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
N-Channel
V
DS
=15V, V
GS
=10V
I
D
=7A
P-Channel
V
DS
=-15V, V
GS
=-10V
I
D
=-5A
N
P
N
P
N
P
-
-
-
-
-
-
10.7
10
1.7
2.2
2.1
1.7
26
13
-
-
-
-
Parameter
Test Conditions
Ch
Limits
Min.
Typ.
Max.
Unit
nC
nS
Note 3:
Pulse test: PW
<
300us duty cycle
<
2%.
Note 4:
Guaranteed by design, not subject to production testing.
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