BAV19W/BAV20W/BAV21W
Taiwan Semiconductor
Small Signal Product
410mW High Voltage SMD Switching Diode
FEATURES
- These diodes are also available in DO-35, LL34 Package
- Surface Mount Device Type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOD-123F
MECHANICAL DATA
- Case: Flat lead SOD-123F small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 4.85 ± 0.5mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Power Dissipation
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
Non-Repetitive Peak Forward
Surge Current
Pulse Width = 1
μs
Pulse Width = 1 s
SYMBOL
P
D
V
RRM
I
FRM
I
O
I
FSM
R
θJA
T
J
, T
STG
SYMBOL
BAV19W
BAV20W
BAV21W
I
F
= 100 mA
I
F
= 200 mA
BAV19W
BAV20W
BAV21W
V
R
= 0 , f = 1.0 MHz
C
J
t
rr
-
-
5
50
pF
ns
I
R
-
100
nA
V
F
V
(BR)
MIN
120
200
250
-
-
VALUE
410
250
625
200
4
1
375
-65 to +150
MAX
-
-
-
1
1.25
V
V
o
UNIT
mW
V
mA
mA
A
C/W
o
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
PARAMETER
Reverse Breakdown Voltage
(Note 1)
Forward Voltage
Reverse Leakage Current
(Note 2)
Junction Capacitance
Reverse Recovery Time (Note 3)
Note 1 : Test condition : I
R
= 100μA
C
UNIT
Note 2 : Test condition : BAV19W @ V
R
=100V, BAV20W @ V
R
=150V, BAV21W @ V
R
=200V
Note 3 : Test condition : I
F
= I
R
= 30mA , R
L
=100Ω , Irr=3mA
Document Number: DS_S1501003
Version: E15
BAV19W/BAV20W/BAV21W
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
Fig. 1 Admissible Power Dissipation Curve
300
250
Power Dissipation (mW)
200
150
100
50
0
0
25
50
75
100
125
150
Ambient Temperature (
o
C)
Forward Current (mA)
1000
Fig. 2 Typicla Forward Characteristics
100
10
1
0.1
0.01
0
1
Forward Voltage (V)
2
Fig. 3 Leakage Current VS. Junction Temperature
Fig. 3
100
10
Leakage Current (uA)
1
0.1
0.01
0
100
Junction Temperature (
o
C)
200
Document Number: DS_S1501003
Version: E15
BAV19W/BAV20W/BAV21W
Taiwan Semiconductor
Small Signal Product
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_S1501003
Version: E15
京公网安备 11010802033920号
EEWORLD
