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BAS40LT1

Description
Schottky Diodes & Rectifiers 40V 225mW Single
CategoryDiscrete semiconductor    diode   
File Size82KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

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BAS40LT1 Overview

Schottky Diodes & Rectifiers 40V 225mW Single

BAS40LT1 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor
Parts packaging codeSOT-23
package instructionMINIATURE, CASE 318-08, 3 PIN
Contacts3
Manufacturer packaging code318-08
Reach Compliance Codenot_compliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.12 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Maximum power dissipation0.225 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
BAS40L, SBAS40L
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
www.onsemi.com
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Operating Junction and Storage
Temperature Range
Forward Continuous Current
Forward Surge Current
t
v
1s
t
v
10 ms
Thermal Resistance (Note 1)
Junction−to−Ambient (Note 2)
Symbol
V
R
P
F
225
1.8
T
J,
T
stg
I
F
I
FSM
200
600
R
qJA
508
311
°C/W
−55 to +150
120
mW
mW/°C
°C
mA
mA
Value
40
Unit
V
40 VOLTS
SCHOTTKY BARRIER DIODES
SOT−23 (TO−236)
CASE 318
STYLE 8
3
CATHODE
1
ANODE
MARKING DIAGRAM
B1 M
G
G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ minimum pad.
2. FR−4 @ 1.0 x 1.0 in pad.
B1 = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
BAS40LT1G,
SBAS40LT1G
BAS40LT3G,
SBAS40LT3G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
3,000 /
Tape & Reel
10,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1997
1
March, 2018 − Rev. 12
Publication Order Number:
BAS40LT1/D
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