DTD713Z series
NPN 200mA 30V Digital Transistors
(Bias Resistor Built-in Transistors)
Datasheet
lOutline
Parameter
Value
VMT3
OUT
IN
GND
IN
GND
EMT3
OUT
V
CC
I
C(MAX.)
R
1
R
2
lFeatures
30V
200mA
1kW
10kW
DTD713ZM
(SC-105AA)
DTD713ZE
SOT-416 (SC-75A)
lInner
circuit
1) Built-In Biasing Resistors
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see innner circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Complementary PNP Types :DTB713Z series
6) Lead Free/RoHS Compliant.
lApplication
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
lPackaging
specifications
Part No.
DTD713ZM
DTD713ZE
Package
VMT3
EMT3
Package
size
(mm)
1212
1616
Taping
code
T2L
TL
Basic
Reel size Tape width
ordering
(mm)
(mm)
unit (pcs)
180
180
8
8
8,000
3,000
Marking
P21
P21
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© 2012 ROHM Co., Ltd. All rights reserved.
1/6
2012.07 - Rev.C
DTD713Z series
lAbsolute
maximum ratings
(Ta = 25°C)
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
V
CC
V
IN
I
C*1
P
D *2
T
j
T
stg
Values
30
-5
to
+10
200
150
150
-55
to
+150
Data Sheet
Unit
V
V
mA
mW
°C
°C
lElectrical
characteristics(Ta
= 25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T *1
Conditions
V
CC
= 5V, I
O
= 100mA
V
O
= 0.3V, I
O
= 20mA
I
O
/ I
I
= 50mA / 2.5mA
V
I
= 5V
V
CC
= 30V, V
I
= 0V
V
O
= 2V, I
O
= 100mA
-
-
V
CE
= 10V, I
E
=
-50mA,
f = 100MHz
Min.
-
2.5
-
-
-
140
0.7
8
-
Typ.
-
-
0.07
-
-
-
1
10
260
Max.
0.3
-
0.3
6.4
0.5
-
1.3
12
-
Unit
V
V
mA
mA
-
kW
-
MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
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© 2012 ROHM Co., Ltd. All rights reserved.
2/6
2012.07 - Rev.C
DTD713Z series
lElectrical
characteristic curves(Ta
= 25°C)
Data Sheet
Fig.1 Input voltage vs. output current
(ON characteristics)
10
V
O
= 0.3V
Fig.2 Output current vs. input voltage
(OFF characteristics)
100
V
CC
= 5V
INPUT VOLTAGE : V
I(on)
[V]
Ta=
-40ºC
25ºC
85ºC
125ºC
1
OUTPUT CURRENT : I
O
[mA]
10
1
Ta= 125ºC
85ºC
25ºC
-40ºC
0.1
0.1
1
10
100
1000
0.1
0
0.5
1
1.5
2
OUTPUT CURRENT : I
O
[mA]
INPUT VOLTAGE : V
I(off)
[V]
Fig.3 Output current vs. output voltage
200
I
I
=1.0mA 0.9mA
0.8mA
0.7mA
Fig.4 DC current gain vs. output current
1000
Ta= 125ºC
85ºC
25ºC
-40ºC
100
V
O
= 2V
OUTPUT CURRENT : I
O
[mA]
0.5mA
100
0.4mA
0.3mA
DC CURRENT GAIN : G
I
150
0.6mA
10
50
Ta=25ºC
0.2mA
0.1mA
0
0
5
0A
1
0.1
1
10
100
1000
10
OUTPUT VOLTAGE : V
O
[V]
OUTPUT CURRENT : I
O
[mA]
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© 2012 ROHM Co., Ltd. All rights reserved.
3/6
2012.07 - Rev.C
DTD713Z series
lElectrical
characteristic curves(Ta
= 25°C)
Data Sheet
Fig.5 Output voltage vs. output current
1
I
O
/I
I
=20
OUTPUT VOLTAGE : V
O(on)
[V]
0.1
Ta= 125ºC
85ºC
25ºC
-40ºC
0.01
1
10
100
1000
OUTPUT CURRENT : I
O
[mA]
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© 2012 ROHM Co., Ltd. All rights reserved.
4/6
2012.07 - Rev.C
DTD713Z series
lDimensions
(Unit : mm)
D
b1
c
Data Sheet
VMT3
A
L
e
b
H
E
x
S A
b3
l1
Lp
A
A1
S
l1
b2
e
Patterm of terminal position areas
DIM
A
A1
b
b1
c
D
E
e
H
E
L
Lp
x
DIM
e1
b2
b3
l1
MILIMETERS
MIN
MAX
0.45
0.55
0.00
0.10
0.17
0.27
0.27
0.37
0.08
0.18
1.10
1.30
0.70
0.90
0.40
1.10
1.30
0.10
0.30
0.20
0.40
-
0.10
MILIMETERS
MIN
MAX
0.80
-
0.37
-
0.47
-
0.50
INCHES
MIN
0.018
0
0.007
0.011
0.003
0.043
0.028
0.02
0.043
0.004
0.008
-
INCHES
MIN
0.03
-
-
-
0.015
0.019
0.02
MAX
0.051
-
-
0.004
MAX
0.022
0.004
0.011
0.015
0.007
0.051
0.035
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
e1
5/6
2012.07 - Rev.C
Talking
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