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BCW30

Description
Bipolar Transistors - BJT SOT-23 PNP GP AMP
CategoryDiscrete semiconductor    The transistor   
File Size43KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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Bipolar Transistors - BJT SOT-23 PNP GP AMP

BCW30 Parametric

Parameter NameAttribute value
MakerON Semiconductor
package instruction,
Reach Compliance Codecompliant
Factory Lead Time1 week
BCW30
BCW30
PNP General Purpose Amplifier
• This device is designed for general purpose medium power amplifiers
and switches requiring collector currents to 300mA.
• Sourced from process 68.
3
2
1
SOT-23
Mark: C2
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings *
T
C
=25°C unless otherwise noted
Symbol
V
CEO
V
CES
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
- Continuous
Parameter
Value
-32
-32
-5.0
-500
-55 ~ +150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
Parameter
Test Condition
I
C
= -10µA, I
E
= 0
I
C
= -2.0mA, I
B
= 0
I
C
= -10µA, I
E
= 0
I
C
= -10µA, I
C
= 0
V
CB
= -32V, I
E
= 0
V
CB
= -32V, I
E
= 0, T
A
= +100°C
V
CE
= -5.0V, I
C
= -2.0mA
I
C
= -10mA, I
B
= -0.5mA
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -200µA
R
S
= 2.0kΩ, f = 1.0kHz
B
W
= 200Hz
-0.6
215
Min.
-32
-32
-32
-5.0
-100
-10
500
-0.3
-0.7
10
V
V
dB
Typ.
Max.
Units
V
V
V
V
nA
µA
Off Characteristics
Collector-Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
On Characteristics
h
FE
V
CE(sat)
V
BE(on)
NF
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Noise Figure
Small Signal Characteristics
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol
P
D
R
θJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Parameter
Max.
350
2.8
357
Units
mW
mW/°C
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
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