BSC0925ND
OptiMOS
Features
TM
Power-MOSFET
Product Summary
V
DS
R
DS(on),max
I
D
Q
OSS
Q
G
(0V..10V)
30
5
40
8.6
13
V
mW
A
nC
nC
• Dual N-channel OptiMOS™ MOSFET
• Optimized for clean switching
• 100% avalanche tested
• Superior thermal resistance
• Optimized for high performance Buck converter
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
VPhase
Type
BSC0925ND
Package
PG-TISON-8
Marking
0925ND
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
2)
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=4.5 V,
T
A
=25 °C
3)
V
GS
=4.5 V,
T
A
=70 °C
3)
V
GS
=10 V,
T
A
=25 °C
4)
Pulsed drain current
5)
Avalanche energy, single pulse
Gate source voltage
1)
Value
40
15
Unit
A
12
11
160
14
±20
mJ
V
I
D,pulse
E
AS
V
GS
T
C
=25 °C
I
D
=20 A,
R
GS
=25
W
J-STD20 and JESD22
One transistor active
2)
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
4)
Device mounted on a minimum pad (one layer, 70 µm thick). One transistor active
See figure 3 for more detailed information.
5)
Rev. 2.0
page 1
2013-07-30
BSC0925ND
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Power dissipation
Symbol Conditions
P
tot
T
C
=25 °C
T
A
=25 °C,
R
thJA
=50 K/W
3)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j
,
T
stg
Value
30
2.5
-55 ... 150
55/150/56
°C
Unit
W
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
R
thJC
top
Device on PCB
R
thJA
6 cm
2
cooling area
3)
minimum footprint
4)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=250 µA
V
DS
=30 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=30 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=20 A
V
GS
=10 V,
I
D
=20 A
Gate resistance
Transconductance
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=30 A
30
1.2
-
-
-
0.1
-
2.0
1
µA
V
-
-
-
-
-
-
-
-
4.2
20
50
125
K/W
-
-
-
-
1.3
38
10
10
5.6
4.2
2.6
77
100
100
7
5
5.2
-
W
S
nA
mW
Rev. 2.0
page 2
2013-07-30
BSC0925ND
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 10 V
V
DS
=0.1 V,
V
GS
=0 to 4.5 V
V
DD
=15 V,
V
GS
=0 V
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 4.5 V
-
-
-
-
-
-
-
2.4
1.4
2.2
3.2
6.7
2.8
13
3.2
-
2.9
-
8.9
-
17
V
nC
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=15 V,
V
GS
=10 V,
I
D
=20 A,
R
G,ext
=1.6
W
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
-
-
-
-
-
-
-
870
330
49
4.7
3.8
17
3.0
1157
439
-
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Q
g(sync)
Q
oss
-
-
5.4
8.6
-
11
I
S
I
S,pulse
V
SD
-
T
C
=25 °C
-
V
GS
=0 V,
I
F
=20 A,
T
j
=25 °C
V
R
=15 V,
I
F
=I
S
,
di
F
/dt =400 A/µs
-
-
-
0.87
30
120
1
A
V
Reverse recovery charge
6)
Q
rr
-
5
-
nC
See figure 16 for gate charge parameter definition
Rev. 2.0
page 3
2013-07-30
BSC0925ND
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10 V
40
50
40
30
30
P
tot
[W]
20
I
D
[A]
20
10
0
0
40
80
120
160
0
40
80
120
160
10
0
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
limited by on-state
resistance
1 µs
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1
10
2
10 µs
10 ms
1 ms
100 µs
0.5
10
0
0.2
0.1
0.05
0.02
10
1
DC
Z
thJC
[K/W]
I
D
[A]
10
-1
10
0
0.01
single pulse
10
-1
10
-1
10
0
10
1
10
2
10
-2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 2.0
page 4
2013-07-30
BSC0925ND
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
250
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
8
3.3 V
7
10 V
200
8V 5V
4.5 V
6
4.5 V
5V
R
DS(on)
[mW]
150
5
8V
I
D
[A]
4
10 V
100
3.3 V
3
2
50
1
0
0
1
2
3
0
0
10
20
30
40
50
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
250
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
160
200
120
150
g
fs
[S]
100
50
150 °C
25 °C
I
D
[A]
80
40
0
0
1
2
3
4
5
0
0
20
40
60
80
100
V
GS
[V]
I
D
[A]
Rev. 2.0
page 5
2013-07-30
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