IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BYC15-600
Hyperfast power diode
Rev. 02 — 29 July 2010
Product data sheet
1. Product profile
1.1 General description
Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package
1.2 Features and benefits
Extremely fast switching
Low reverse recovery current
Low thermal resistance
Reduces switching loss in associated
MOSFET
1.3 Applications
Continuous Current Mode (CCM)
Power
Half-bridge lighting ballasts
Half-bridge or full-bridge
switched-mode
1.4 Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average forward current square-wave pulse;
δ
= 0.5 ; T
mb
≤
98 °C;
see
Figure 1;
see
Figure 2
forward voltage
I
F
= 15 A; T
j
= 150 °C;
see
Figure 3
I
F
= 15 A; V
R
= 400 V;
dI
F
/dt = 500 A/µs; T
j
= 25 °C;
see
Figure 4
Conditions
Min
-
-
Typ
-
-
Max Unit
600
15
V
A
Specify Name
Static characteristics
V
F
-
1.4
2
V
Dynamic characteristics
t
rr
reverse recovery time
-
19
-
ns
NXP Semiconductors
BYC15-600
Hyperfast power diode
2. Pinning information
Table 2.
Pin
1
2
mb
Pinning information
Symbol Description
K
A
mb
cathode
anode
mounting base; cathode
mb
K
A
001aaa020
Simplified outline
Graphic symbol
1
2
SOD59 (TO-220AC)
3. Ordering information
Table 3.
Ordering information
Package
Name
BYC15-600
TO-220AC
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 2-lead TO-220AC
Version
SOD59
Type number
4. Limiting values
Table 4.
Symbol
Specify Name
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
T
stg
T
j
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
non-repetitive peak forward
current
storage temperature
junction temperature
T
mb
≤
100 °C; DC
square-wave pulse;
δ
= 0.5 ; T
mb
≤
98 °C;
see
Figure 1;
see
Figure 2
square-wave pulse;
δ
= 0.5 ; t
p
= 25 µs;
T
mb
≤
98 °C
t
p
= 10 ms; sine-wave pulse; T
j(init)
= 25 °C
t
p
= 8.3 ms; sine-wave pulse; T
j(init)
= 25 °C
-
-
-
-
-
-
-
-40
-
600
600
500
15
30
200
220
150
150
V
V
V
A
A
A
A
°C
°C
Limiting values
Parameter
Conditions
Min
Max
Unit
In accordance with the Absolute Maximum Rating System (IEC 60134).
BYC15-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
2 of 11
NXP Semiconductors
BYC15-600
Hyperfast power diode
40
P
tot
(W)
30
2.2
2.8
20
4.0
1.9
003aac083
50
P
tot
(W)
40
0.5
30
0.2
0.1
20
003aac084
δ
=1
a = 1.57
10
10
0
0
5
10
I
F(AV)
(A)
15
0
0
6
12
18
I
F(AV)
(A)
24
a = form factor = I
F(RMS)
/ I
F(AV)
Fig 1.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
Fig 2.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
BYC15-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
3 of 11
NXP Semiconductors
BYC15-600
Hyperfast power diode
5. Thermal characteristics
Table 5.
Symbol
Specify Name
R
th(j-mb)
R
th(j-a)
thermal resistance from junction with heatsink compound
to mounting base
thermal resistance from junction in free air
to ambient
-
-
-
60
1.5
-
K/W
K/W
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
BYC15-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
4 of 11
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