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BLF6G38LS-50,118

Description
RF MOSFET Transistors TRANS WIMAX PWR LDMOS
CategoryDiscrete semiconductor    The transistor   
File Size1MB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BLF6G38LS-50,118 Overview

RF MOSFET Transistors TRANS WIMAX PWR LDMOS

BLF6G38LS-50,118 Parametric

Parameter NameAttribute value
Source Url Status Check Date2013-06-14 00:00:00
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
Parts packaging codeSOT
Contacts2
Manufacturer packaging codeSOT502B
Reach Compliance Codecompliant
Base Number Matches1
BLF6G38-50; BLF6G38LS-50
WiMAX power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
50 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3800 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a class-AB production test circuit.
Mode of operation f (MHz)
V
DS
(V) P
L(AV)
(W) P
L(M)[1]
(W) G
p
(dB)
D
(%) ACPR
885k
(dBc) ACPR
1980k
(dBc)
9
70
14
23
49
[3]
64
[3]
1-carrier N-CDMA
[2]
3400 to 3600 28
[1]
[2]
[3]
P
L(M)
stands for peak output power.
Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.23 MHz.
Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
synchronization and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 %
probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of
3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an I
Dq
of 450 mA, a
power gain of 14 dB, a drain efficiency of 23 % and a peak output power of 70 W:
Qualified up to a maximum V
DS
operation of 32 V
Suitable for operation in the 3.4 GHz to 3.8 GHz frequency range
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation
Internally matched for ease of use
Low gold plating thickness on leads
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)

BLF6G38LS-50,118 Related Products

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Description RF MOSFET Transistors TRANS WIMAX PWR LDMOS RF MOSFET Transistors LDMOS TNS
Brand Name NXP Semiconductor NXP Semiconductor
Is it Rohs certified? conform to conform to
Parts packaging code SOT SOT
Contacts 2 2
Manufacturer packaging code SOT502B SOT502B
Reach Compliance Code compliant compliant
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