BSS192P
SIPMOS
Small-Signal-Transistor
Feature
•
P-Channel
•
Enhancement mode
•
Logic Level
•
dv/dt rated
Product Summary
V
DS
R
DS(on)
I
D
-250
12
-0.19
PG-SOT89
Drain
pin 2
Gate
pin1
Source
pin 3
3
1
2
V
Ω
A
• Qualified according to AEC Q101
•
Halogenfree according to IEC61249221
2
VPS05162
Type
BSS 192 P
Package
PG-SOT89
Pb-free
Yes
Tape and Reel Information
H6327:
1000 pcs/reel
Marking
KC
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
A=25°C
T
A
=70°C
Symbol
I
D
Value
-0.19
-0.1
Unit
A
Pulsed drain current
T
A
=25°C
I
D puls
dv/dt
V
GS
P
tot
T
j ,
T
stg
-0.76
6
±20
1
-55... +150
55/150/56
Class 1a
Reverse diode dv/dt
I
S
=-0.19A,
V
DS
=-200V, di/dt=-200A/µs,
T
jmax
=150°C
kV/µs
V
W
°C
Gate source voltage
Power dissipation
T
A=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ESD Class
JESD22-A114-HBM
Rev 1.7
Page 1
2012-12-03
BSS 192 P
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 2)
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
125
R
thJS
-
-
10
K/W
Symbol
min.
Values
typ.
max.
Unit
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0,
I
D
=-250µA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
R
DS(on)
R
DS(on)
-
-
-
-
-250
-1
Values
typ.
-
-1.5
max.
-
-2
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=-130µA
Zero gate voltage drain current
V
DS
=-250V,
V
GS
=0,
T
j
=25°C
V
DS
=-250V,
V
GS
=0,
T
j
=150°C
µA
-0.1
-10
-10
10
8.3
7.7
-0.2
-100
-100
20
15
12
nA
Ω
Gate-source leakage current
V
GS
=-20V,
V
DS
=0
Drain-source on-state resistance
V
GS
=-2.8V,
I
D
=-0.025A
Drain-source on-state resistance
V
GS
=-4.5V,
I
D
=-0.1A
Drain-source on-state resistance
V
GS
=-10V,
I
D
=-0.19A
Rev 1.7
Page 2
2012-12-03
BSS 192 P
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
I
SM
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0,
I
F
=-0.19A
V
R
=-125V,
I
F =
l
S
,
di
F
/dt=100A/µs
Symbol
Conditions
min.
Values
typ.
0.38
83
13
6
4.7
5.2
72
50
max.
-
104
16
8
7
8
108
75
Unit
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
|V
DS
|≥2*|I
D
|*R
DS(on)max
,
I
D
=-0.1A
V
GS
=0,
V
DS
=-25V,
f=1MHz
0.19
-
-
-
-
-
-
-
S
pF
V
DD
=-125V,
V
GS
=-10V,
I
D
=-0.19A,
R
G
=2Ω
ns
Q
gs
Q
gd
Q
g
V
DD
=-200V,
I
D
=-0.19A
-
-
-
-
-0.2
-1.9
-4.9
-2.63
-0.25 nC
-2.4
-6.1
-
V
V
DD
=-200V,
I
D
=-0.19A,
V
GS
=0 to -10V
V
(plateau)
V
DD
=-200V,
I
D
=-0.19A
I
S
T
A
=25°C
-
-
-
-
-
-
-
-0.78
46
72
-0.19 A
-0.76
-1.1
57
90
V
ns
nC
Rev 1.7
Page 3
2012-12-03
BSS 192 P
1 Power dissipation
P
tot
=
f
(TA )
1.1
BSS 192 P
2 Drain current
I
D
=
f
(TA )
parameter: |V
GS
|
≥
10V
-0.2
BSS 192 P
W
0.9
0.8
A
-0.16
-0.14
P
tot
I
D
20
40
60
80
100
120
0.7
0.6
-0.12
-0.1
0.5
-0.08
0.4
0.3
0.2
0.1
0
0
-0.06
-0.04
-0.02
0
0
°C
160
20
40
60
80
100
120
°C
160
T
A
T
A
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A = 25°C
-10
1
BSS 192 P
4 Transient thermal impedance
Z
thJA
=
f
(t
p
)
parameter :
D
=
t
p
/T
K/W
10
3
BSS 192 P
A
10
2
-10
0
t
p = 240.0µs
10
1
I
D
1 ms
Z
thJA
10 ms
10
0
D = 0.50
0.20
0.10
on
)
=
-10
-1
DS
(
V
DS
/
I
D
10
-1
R
-10
-2
10
-2
0.05
0.02
DC
10
-3
single pulse
0.01
-10
-3 -1
-10
-10
0
-10
1
-10
2
V
-10
3
10
-4 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
V
DS
Rev 1.7
Page 4
t
p
2012-12-03
BSS 192 P
5 Typ. output characteristic
I
D
=
f
(V
DS
)
parameter:
T
j =25°C, -V
GS
0.7
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
V
GS
;
T
j =25°C, -V
GS
15
10V
A 6V
4.6V
4V
3.6V
0.5
3.4V
3.2V
2.8V
0.4
2.6V
2.4V
0.3
Ω
12
2.4V 2.6V
2.8V
3.2V
R
DS(on)
10.5
9
7.5
6
4.5
3
-I
D
0.2
10V
6V
4.6V
4V
3.6V
3.4V
0.1
1.5
0
0
0
0
1
2
3
4
5
6
7
8
V
10
0.1
0.2
0.3
0.4
0.5
A
0.7
-V
DS
-I
D
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
); |V
DS |
≥
2 x |I
D
| x
R
DS(on)max
parameter:
T
j
= 25 °C
0.7
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter:
T
j =25°C
0.8
A
S
0.6
0.5
-I
D
g
fs
0.4
0.3
0.2
0.1
0
0
0.5
1
1.5
2
2.5
3.5
0.5
0.4
0.3
0.2
0.1
V
0
0
0.1
0.2
0.3
0.4
0.5
A
0.7
-V
GS
Rev 1.7
Page 5
-I
D
2012-12-03
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