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DME205010R

Description
Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm
CategoryDiscrete semiconductor    The transistor   
File Size1MB,7 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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DME205010R Overview

Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm

DME205010R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionSC-74, 6 PIN
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)210
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN AND PNP
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1
DME20501
Silicon PNP epitaxial planar type (Tr1)
Silicon NPN epitaxial planar type (Tr2)
For general amplification
Features
High forward current transfer ratio h
FE
with excellent linearity
Low collector-emitter saturation voltage V
CE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: B1
Basic Part Number
DSA2001 + DSC2001 (Individual)
1: Emitter (Tr1)
2: Base (Tr1)
3: Base (Tr2)
Panasonic
JEITA
Code
(C1)
6
Packaging
DME205010R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Tr1
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Tr2
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Overall
Junction temperature
Operating ambient temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
opr
T
stg
Rating
–60
–50
–7
–100
–200
60
50
7
100
200
300
150
–40 to +85
–55 to +150
Unit
V
V
V
mA
mA
V
V
V
mA
mA
mW
°C
°C
°C
4: Collector (Tr2)
5: Emitter (Tr2)
6: Collector (Tr1)
Mini6-G4-B
SC-74
SOT-457
(E2)
5
(C2)
4
Tr2
Tr1
1
(E1)
2
(B1)
3
(B2)
Publication date: January 2014
Ver. EED
1
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