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FJP3305TU

Description
Bipolar Transistors - BJT NPN 700V/4A
Categorysemiconductor    Discrete semiconductor   
File Size377KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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Bipolar Transistors - BJT NPN 700V/4A

FJP3305TU Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerON Semiconductor
Product CategoryBipolar Transistors - BJT
RoHSDetails
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max400 V
Collector- Base Voltage VCBO700 V
Emitter- Base Voltage VEBO9 V
Maximum DC Collector Current4 A
Gain Bandwidth Product fT4 MHz
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
Height9.4 mm (Max)
Length10.1 mm (Max)
PackagingTube
Width4.7 mm (Max)
Continuous Collector Current2 A
DC Collector/Base Gain hfe Min19
Pd - Power Dissipation75 W
Factory Pack Quantity50
Unit Weight0.080072 oz
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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FJP3305TU Related Products

FJP3305TU FJP3305 FJP3305H2TU FJP3305H1 FJP3305H2 FJP3305H1TU
Description Bipolar Transistors - BJT NPN 700V/4A Bipolar Transistors - BJT NPN Silicon Trans Bipolar Transistors - BJT NPN Silicon Trans TRANS NPN 400V 4A TO-220 TRANS NPN 400V 4A TO-220 TRANS NPN 400V 4A TO220
Configuration Single SINGLE SINGLE SINGLE SINGLE SINGLE
package instruction - FLANGE MOUNT, R-PSFM-T3 TO-220, 3 PIN FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 TO-220, 3 PIN
Reach Compliance Code - compliant compliant compliant compliant compliant
Maximum collector current (IC) - 4 A 4 A 4 A 4 A 4 A
Collector-emitter maximum voltage - 400 V 400 V 400 V 400 V 400 V
Minimum DC current gain (hFE) - 8 26 19 26 19
JEDEC-95 code - TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components - 1 1 1 1 1
Number of terminals - 3 3 3 3 3
Maximum operating temperature - 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type - NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) - 75 W 75 W 75 W 75 W 75 W
surface mount - NO NO NO NO NO
Terminal form - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location - SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) - 4 MHz 4 MHz 4 MHz 4 MHz 4 MHz
Base Number Matches - 1 1 - 1 1
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