DS 75
DSA 75
DSI 75
DSAI 75
Rectifier Diode
Avalanche Diode
V
RRM
= 1200-1800 V
I
F(RMS)
= 160 A
I
F(AV)M
= 110 A
V
RSM
V
1300
1300
1700
1900
V
(BR)min
①
V
RRM
V
-
1300
1760
1950
V
1200
1200
1600
1800
Anode
on stud
DS 75-12B
DSA 75-12B
DSA 75-16B
DSA 75-18B
Cathode
on stud
DSI 75-12B
DSAI 75-12B
DSAI 75-16B
DSAI 75-18B
DO-203 AB
C
A
DS
DSA
A
C
DSI
DSAI
①
Only for Avalanche Diodes
1/4-28UNF
A = Anode
C = Cathode
Symbol
I
F(RMS)
I
F(AV)M
P
RSM
I
FSM
Test Conditions
T
VJ
= T
VJM
T
case
= 100°C; 180° sine
DSA(I) types, T
VJ
= T
VJM
, t
p
= 10
µs
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
160
110
20
1400
1500
1250
1310
9800
9450
7820
7210
-40...+180
180
-40...+180
A
A
kW
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
°C
°C
°C
Nm
lb.in.
g
●
Features
International standard package,
JEDEC DO-203 AB (DO-5)
Planar glassivated chips
●
Applications
High power rectifiers
Field supply for DC motors
Power supplies
●
●
●
I
2
t
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
T
VJ
T
VJM
T
stg
M
d
Weight
Symbol
I
R
V
F
V
T0
r
T
R
thJC
R
thJH
d
S
d
A
a
Test Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
I
F
= 150 A; T
VJ
= 25°C
Mounting torque
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
●
●
●
●
2.4-4.5
21-40
21
Dimensions in mm (1 mm = 0.0394")
Characteristic Values
≤
≤
6
1.17
0.75
2
0.5
0.9
4.05
3.9
100
mA
V
V
mΩ
K/W
K/W
mm
mm
m/s
2
For power-loss calculations only
T
VJ
= T
VJM
DC current
DC current
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
20170323b
© 2017 IXYS All rights reserved
1-2
DS 75
DSA 75
typ.
lim.
50Hz, 80%V
RRM
5
DSI 75
DSAI 75
10
4
01
T
VJ
= 180°C
T
VJ
= 25°C
001
T
VJ
= 180°C
Fig. 1
Forward characteristics
Fig. 2
Surge overload current
I
FSM
: crest value, t: duration
Fig. 3
I
2
t versus time (1-10 ms)
ase
Fig. 4
5.1
Power dissipation versus forward current and ambient temperature
Fig. 5
Max. forward current at case
temperature
30°
60°
120°
180°
DC
R
thJH
for various conduction angles d:
d
DC
180°
120°
60°
30°
R
thJH
(K/W)
0.900
1.028
1.085
1.272
1.476
Constants for Z
thJH
calculation:
i
1
2
3
4
R
thi
(K/W)
0.0731
0.1234
0.4035
0.3000
t
i
(s)
0.0015
0.0237
0.4838
1.5
20170323b
Fig. 6
Transient thermal impedance junction to heatsink
© 2017 IXYS All rights reserved
002 C° 061
c
T
021
08
04
0
0
05
DC
180° sin
120°
60°
30°
001
051
1 K/W
1.2 K/W
1.6 K/W
2 K/W
3 K/W
4 K/W
M)VA(F
I
R
thJA
:
t
s8
019m 7 6 5 4
3
2
1
002
4
A
01
t
2
I
T
VJ
= 45°C
10
0
s
2
A
3
002 C° 051
01
01
s
s
t
1-
t
2
01
bma
T
01
001
2-
01
1
01
05
3-
01
0
005
0001
0051
0
002
0
A
MSF
0
01
I
A
V 5.1
051
M)VA(F
I
1-
01
001
F
V
0.1
2-
01
05
5.0
3-
0.0
0
01
0.0
0
W/K
5.0
0.1
001
051
F
051 I
002
002
05
05
0
A
W
HJht
F
V
R
= 0 V
T
VJ
= 45°C
T
VJ
= 180°C
6
4
2
3
DC
180° sin
120°
60°
30°
P
Z
2-2
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