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MRF6S18100NBR1

Description
RF MOSFET Transistors 1990MHZ 28V
CategoryDiscrete semiconductor    The transistor   
File Size1MB,21 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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MRF6S18100NBR1 Overview

RF MOSFET Transistors 1990MHZ 28V

MRF6S18100NBR1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-272
package instructionFLANGE MOUNT, R-PDFM-F4
Contacts4
Manufacturer packaging codeCASE 1484-04
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage68 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandL BAND
JEDEC-95 codeTO-272
JESD-30 codeR-PDFM-F4
JESD-609 codee3
Humidity sensitivity level3
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)343 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Freescale Semiconductor
Technical Data
Document Number: MRF6S18100N
Rev. 2, 12/2008
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequen-
cies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier
amplifier applications.
GSM Application
Typical GSM Performance: V
DD
= 28 Volts, I
DQ
= 900 mA,
P
out
= 100 Watts, f = 1990 MHz
Power Gain — 14.5 dB
Drain Efficiency — 49%
GSM EDGE Application
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 700 mA,
P
out
= 40 Watts Avg., Full Frequency Band (1805--1880 MHz or
1930--1990 MHz)
Power Gain — 15 dB
Drain Efficiency — 35%
Spectral Regrowth @ 400 kHz Offset = --63 dBc
Spectral Regrowth @ 600 kHz Offset = --76 dBc
EVM — 2% rms
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW
Output Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6S18100NR1
MRF6S18100NBR1
1805-
-1990 MHz, 100 W, 28 V
GSM/GSM EDGE
LATERAL N-
-CHANNEL
RF POWER MOSFETs
CASE 1486-
-03, STYLE 1
TO-
-270 WB-
-4
MRF6S18100NR1
CASE 1484-
-04, STYLE 1
TO-
-272 WB-
-4
MRF6S18100NBR1
Table 1. Maximum Ratings
Rating
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +68
--0.5, +12
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 CW
Case Temperature 77°C, 40 CW
Symbol
R
θJC
Value
(2,3)
0.51
0.62
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2005--2006, 2008. All rights reserved.
MRF6S18100NR1 MRF6S18100NBR1
1
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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