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BLS8G2731LS-400PU

Description
RF MOSFET Transistors BLS8G2731LS-400P/LDMOST/STANDA
Categorysemiconductor    Discrete semiconductor   
File Size983KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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RF MOSFET Transistors BLS8G2731LS-400P/LDMOST/STANDA

BLS8G2731LS-400PU Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryRF MOSFET Transistors
TechnologySi
PackagingTube
Factory Pack Quantity20
BLS8G2731L-400P;
BLS8G2731LS-400P
LDMOS S-band radar power transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
400 W LDMOS power transistor for S-band radar applications in the frequency range from
2.7 GHz to 3.1 GHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C; t
p
= 50
s;
= 2 %; I
Dq
= 200 mA; in a class-AB demo test
circuit.
Test signal
pulsed RF
f
(GHz)
2.7 to 2.9
2.9 to 3.1
2.7 to 3.1
[1]
[2]
at 1 dB gain compression.
at 2 dB gain compression.
V
DS
(V)
32
32
32
P
L(1dB)
(W)
540
490
530
G
p
[1]
(dB)
11
12
12
D
[1]
(%)
45
47
45
P
L(2dB)
(W)
610
550
590
G
p
[2]
(dB)
10
11
11
D
[2]
(%)
46
49
47
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for S-band operation
Excellent thermal stability
Easy power control
Integrated dual sided ESD protection enables excellent off-state isolation
High flexibility with respect to pulse formats
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequent range 2.7 GHz to 3.1 GHz
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