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FQD1N60CTF

Description
MOSFET 600V N-Channel Adv Q-FET C-Series
Categorysemiconductor    Discrete semiconductor   
File Size542KB,9 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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MOSFET 600V N-Channel Adv Q-FET C-Series

FQD1N60CTF Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerON Semiconductor
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current1 A
Rds On - Drain-Source Resistance11.5 Ohms
Vgs - Gate-Source Voltage30 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Pd - Power Dissipation2.5 W
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
Height2.39 mm
Length6.73 mm
Transistor Type1 N-Channel
TypeMOSFET
Width6.22 mm
Forward Transconductance - Min0.75 S
Fall Time27 ns
Rise Time21 ns
Factory Pack Quantity2000
Typical Turn-Off Delay Time13 ns
Typical Turn-On Delay Time7 ns
Unit Weight0.139332 oz
FQD1N60C / FQU1N60C — N-Channel QFET
®
MOSFET
November 2013
FQD1N60C / FQU1N60C
N-Channel QFET
®
MOSFET
600 V, 1.0 A, 11.5
Features
• 1 A, 600 V, R
DS(on)
= 11.5
(Max.) @ V
GS
= 10 V,
I
D
= 0.5 A
• Low Gate Charge (Typ. 4.8 nC)
• Low Crss (Typ. 3.5 pF)
• 100% Avalanche Tested
• RoHS Compliant
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
D
D
G
S
D-PAK
I-PAK
G
D
S
G
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted.
FQD1N60CTM / FQU1N60CTU
600
1
0.6
(Note 1)
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C)*
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
4
±
30
33
1
2.8
4.5
2.5
28
0.22
-55 to +150
300
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction-to-Ambient (* 1 in
2
pad of 2 oz copper), Max.
1
FQD1N60CTM /
FQU1N60CTU
4.53
110
50
Unit
°C/W
©2003 Fairchild Semiconductor Corporation
FQD1N60C / FQU1N60C Rev. C1
www.fairchildsemi.com
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