BC559
Low Noise Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current — Continuous
Total Device Dissipation @
T
A
= 25°C
Derate above 25°C
Total Device Dissipation @
T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
BC559
−30
−30
−5.0
−100
625
5.0
1.5
12
−55
to +150
BC560
−45
−50
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
COLLECTOR
1
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
2
BASE
3
EMITTER
1
2
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3
P
D
CASE 29−04, STYLE 17
TO−92 (TO−226AA)
T
J
, T
stg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to
Ambient
Thermal Resistance, Junction to
Case
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
=
−10
mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage
(I
C
=
−10
μAdc,
I
E
= 0)
Emitter
−Base
Breakdown Voltage
(I
E
=
−10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
=
−30
Vdc, I
E
= 0)
(V
CB
=
−30
Vdc, I
E
= 0, T
A
= +125°C)
Emitter Cutoff Current
(V
EB
=
−4.0
Vdc, I
C
= 0)
BC559
BC560
BC559
BC560
V
(BR)CEO
Vdc
−30
−45
−30
−50
−5.0
—
—
—
—
—
—
—
Vdc
—
—
—
Vdc
V
(BR)CBO
V
(BR)EBO
I
CBO
—
—
—
—
—
—
−15
−5.0
−15
nAdc
μAdc
nAdc
I
EBO
©
Semiconductor Components Industries, LLC, 2006
August, 2006
−
Rev. 3
1
Publication Order Number:
BC559/D
BC559
2.0
hFE, NORMALIZED DC CURRENT GAIN
1.5
1.0
0.8
0.6
0.4
0.3
0.2
−0.2
V
CE
= −10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
−1.0
−0.9
−0.8
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
−0.5
−1.0 −2.0
−5.0 −10 −20
−50 −100 −200
I
C
, COLLECTOR CURRENT (mAdc)
0
−0.1
−0.2
V
CE(sat)
@ I
C
/I
B
= 10
−0.5 −1.0 −2.0
−5.0 −10 −20
I
C
, COLLECTOR CURRENT (mAdc)
−50
−100
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= −10 V
Figure 1. Normalized DC Current Gain
BANDWIDTH PRODUCT (MHz)
Figure 2. “Saturation” and “On” Voltages
400
300
C, CAPACITANCE (pF)
200
100
80
60
40
30
20
10
7.0
5.0
C
ib
T
A
= 25°C
V
CE
= −10 V
T
A
= 25°C
3.0
C
ob
2.0
f T, CURRENT−GAIN
−0.5 −0.7 −1.0
−2.0
−5.0 −7.0 −10
−20
I
C
, COLLECTOR CURRENT (mAdc)
−50
1.0
−0.4 −0.6
−1.0
−2.0
−4.0
−10
V
R
, REVERSE VOLTAGE (VOLTS)
−20
−40
Figure 3. Current−Gain — Bandwidth Product
Figure 4. Capacitance
r b, BASE SPREADING RESISTANCE (OHMS)
170
160
150
V
CE
= −10 V
f = 1.0 kHz
T
A
= 25°C
140
130
120
−0.1
−0.2
−0.5
−1.0
−2.0
I
C
, COLLECTOR CURRENT (mAdc)
−5.0
−10
Figure 5. Base Spreading Resistance
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3
BC559
PACKAGE DIMENSIONS
CASE 029−04
(TO−226AA)
ISSUE AD
A
R
P
SEATING
PLANE
B
F
L
K
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
X X
H
V
1
G
C
N
N
J
SECTION X−X
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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