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SKP02N60XKSA1

Description
IGBT Transistors IGBT PRODUCTS
CategoryDiscrete semiconductor    The transistor   
File Size464KB,13 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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SKP02N60XKSA1 Overview

IGBT Transistors IGBT PRODUCTS

SKP02N60XKSA1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeTO-220AB
package instructionGREEN, PLASTIC, TO-220, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW CONDUCTION LOSS
Shell connectionCOLLECTOR
Maximum collector current (IC)6 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)354 ns
Nominal on time (ton)34 ns
SKP02N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode
75% lower
E
off
compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10
s
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
PG-TO-220-3-1
- parallel switching capability
(TO-220AB)
Very soft, fast recovery anti-parallel Emitter Controlled
Diode
Pb-free lead plating; RoHS compliant
1
Qualified according to JEDEC for target applications
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
C
G
E
Type
SKP02N60
Maximum Ratings
Parameter
V
CE
600V
I
C
2A
V
CE(sat)
2.2V
T
j
150C
Marking
K06N60
Package
PG-TO-220-3-1
Symbol
V
CE
I
C
Value
600
6.0
2.9
Unit
V
A
Collector-emitter voltage
DC collector current
T
C
= 25C
T
C
= 100C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
600V,
T
j
150C
Diode forward current
T
C
= 25C
T
C
= 100C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
Power dissipation
T
C
= 25C
Operating junction and storage temperature
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
1
2
2
I
Cpul s
-
I
F
12
12
6.0
2.9
I
Fpul s
V
GE
t
SC
P
tot
T
j
,
T
stg
T
s
12
20
10
30
-55...+150
260
V
s
W
C
°C
V
GE
= 15V,
V
CC
600V,
T
j
150C
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.3
12.06.2013
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