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BAS21VD,165

Description
Diodes - General Purpose, Power, Switching DIODE SW TRPL TAPE-7
CategoryDiscrete semiconductor    diode   
File Size659KB,11 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BAS21VD,165 Overview

Diodes - General Purpose, Power, Switching DIODE SW TRPL TAPE-7

BAS21VD,165 Parametric

Parameter NameAttribute value
Source Url Status Check Date2013-06-14 00:00:00
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTSOP
package instructionR-PDSO-G6
Contacts6
Manufacturer packaging codeSOT457
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSEPARATE, 3 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components3
Number of terminals6
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.25 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage250 V
Maximum reverse current100 µA
Maximum reverse recovery time0.05 µs
Reverse test voltage200 V
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
BAS21VD
1 August 2013
High-voltage switching diodes
Product data sheet
1. General description
Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74/TSOP6) small
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
High switching speed: t
rr
≤ 50 ns
Low capacitance: C
d
≤ 5 pF
Reverse voltage: V
R
≤ 200 V
AEC-Q101 qualified
Repetitive peak reverse voltage: V
RRM
≤ 250 V
Repetitive peak forward current: I
FRM
≤ 1 A
Small SMD plastic package
3. Applications
High-voltage switching in surface-mounted circuits
Automotive
Communication
4. Quick reference data
Table 1.
Symbol
Per diode
I
F
V
R
Per diode
I
R
t
rr
reverse current
reverse recovery time
V
R
= 200 V; T
amb
= 25 °C; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02
I
F
= 30 mA; I
R
= 30 mA; I
R(meas)
= 3 mA;
R
L
= 100 Ω; T
amb
= 25 °C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Quick reference data
Parameter
forward current
reverse voltage
Conditions
pulsed; t
p
≤ 300 µs; δ ≤ 0.02
[1]
Min
-
-
Typ
-
-
Max
200
200
Unit
mA
V
-
-
25
16
100
50
nA
ns
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