n-Channel Power MOSFET
OptiMOS™
BSB014N04LX3 G
Data Sheet
2.3, 2011-05-24
Final
Industrial & Multimarket
OptiMOS™ Power-MOSFET
BSB014N04LX3 G
1
Description
OptiMOS™40V products are class leading power MOSFETs for highest power
density and energy efficient solutions. Ultra low gate- and output charges together
with lowest on state resistance in small footprint packages make OptiMOS™ 40V
the best choice forthe demanding requirements of voltage regulator solutions in
Servers, Datacom and Telecom applications. Super fast switching Control FETs
together with low EMI Sync FETs provide solutions that are easy to design in.
OptiMOS™ products are available in high performance packages to tackle your
most challenging applications giving full flexibility in optimizing space- efficiency
and cost. OptiMOS™ products are designed to meet and exceed the energy
efficiency and power density requirements of the sharpened next generation
voltage regulation standards in computing applications
Features
•
•
•
•
•
•
•
•
•
•
•
Optimized for high switching frequency DC/DC converter
100% avalanche tested
Excellent gate charge x R
DS(on)
product (FOM)
Qualified according to JEDEC
1)
for target applications
Pb-free plating; RoHS compliant
Very low on-resistance R
DS(on)
Low profile (<0.7 mm)
Low parasitic inductance
Double.sided cooling
Compatible with DirectFET® package MX footprint and outline
100% Rg Tested
Applications
•
•
•
•
On board power for server
Power managment for high performance computing
Synchronous rectification
High power density point of load converters
Key Performance Parameters
Value
40
1.4
180
89
148
Unit
V
mΩ
A
nC
Related Links
IFX OptiMOS webpage
IFX OptiMOS product brief
IFX OptiMOS spice models
IFX Design tools
Table 1
Parameter
V
DS
R
DS(on),max
I
D
Q
OSS
Q
g
.
typ
Type
BSB014N04LX3 G
Package
MG-WDSON-2
Marking
0104
1) J-STD20 and JESD22
Final Data Sheet
1
2.3, 2011-05-24
OptiMOS™ Power-MOSFET
BSB014N04LX3 G
2
Maximum ratings
at
T
j
= 25 °C, unless otherwise specified.
Table 2
Parameter
Continuous drain current
Maximum ratings
Symbol
Min.
I
D
-
-
Values
Typ.
Max.
180
128
36
Pulsed drain current
2)
Avalanche current, single pulse
3)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1) J-STD22 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
Unit
A
Note / Test Condition
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=10 V,
T
A
=25 °C,
R
thJA
=45 K/W
1)
T
C
=25 °C
I
D,pulse
I
AS
E
AS
V
GS
P
tot
T
j
,T
stg
-
-
-
-20
-
-40
55
-
-
-
-
-
-
150
400
50
260
20
89
2.8
150
56
°C
Ncm
mJ
V
W
I
D
=50 A,R
GS
=25
Ω
T
C
=25 °C
T
A
=25 °C,
R
thJA
=45 K/W
3
Table 3
Parameter
Thermal characteristics
Thermal characteristics
Symbol
Min.
-
-
Values
Typ.
1.0
-
Max.
-
1.4
45
°K/W
Unit
Note /
Test Condition
bottom
top
6 cm
2
cooling area
1)
Thermal resistance, junction - case
R
thJC
Device on PCB
R
thJA
1) Device on 40 mm x 40 mm x 1.5 epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB
is vertical in still air.
Final Data Sheet
2
2.3, 2011-05-24
OptiMOS™ Power-MOSFET
BSB014N04LX3 G
Electrical characteristics
4
Electrical characteristics
Electrical characteristics, at
T
j=25 °C, unless otherwise specified.
Table 4
Parameter
Static characteristics
Symbol
Min.
Drain-source breakdown voltage
V
(BR)DSS
Gate threshold voltage
Zero gate voltage drain current
40
1.2
-
-
Gate-source leakage current
-
-
0.1
10
10
1.6
1.2
0.5
130
Values
Typ.
Max.
-
2
10
100
100
2
1.4
1.0
Ω
S
|V
DS
|>2|I
D|RDS(on)max
,
I
D
=30 A
nA
mΩ
µA
V
Unit
Note / Test Condition
V
GS
=0 V,
I
D
=1.0 mA
V
DS
=
V
GS
,
I
D
=250 µA
V
DS
=40 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=40 V,
V
GS
=0 V,
T
j
=125 °C
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=25A
V
GS
=10 V,
I
D
=30 A
V
GS(th)
I
DSS
I
GSS
-
-
-
0.2
65
Drain-source on-state resistance
R
DS(on)
Gate resistance
Transconductance
R
G
g
fs
Table 5
Parameter
Dynamic characteristics
Symbol
Min.
Values
Typ.
12700
2400
140
12
8.4
60
10
Max.
16900
3200
-
-
-
-
-
ns
pF
-
-
-
-
-
-
-
Unit
Note /
Test Condition
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
V
GS
=0 V,
V
DS
=20 V,
f
=1 MHz
V
DD
=20V,
V
GS
=10 V,
I
D
=30 A,
R
G
= 1.6
Ω
t
d(on)
t
r
t
d(off)
t
f
Final Data Sheet
3
2.3, 2011-05-24
OptiMOS™ Power-MOSFET
BSB014N04LX3 G
Electrical characteristics
Table 6
Parameter
Gate charge characteristics
1)
Symbol
Min.
Values
Typ.
33
19
15
29
148
2.8
71
Max.
-
-
-
-
196
-
95
V
nC
nC
-
-
-
-
-
-
-
Unit
Note /
Test Condition
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Q
gs
Q
g(th)
Q
gd
Q
sw
V
DD
=20 V,
I
D
=30 A,
V
GS
=0 to 10 V
Q
g
V
plateau
Q
g
V
DD
=20 V,
I
D
=30 A,
V
GS
=0 to 4.5V
V
DS
=0.1 V,
V
GS
=0 to 10 V
V
DD
=20 V,
V
GS
=0 V
Gate charge total, sync. FET
Output charge
Q
g(sync)
Q
oss
139
89
1) See figure 16 for gate charge parameter definition
Table 7
Parameter
Reverse diode characteristics
Symbol
Min.
I
s
I
S,pulse
Values
Typ.
Max.
81
400
-
-
0.77
-
1.1
50
V
nC
A
Unit
Note /
Test Condition
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
T
C
=25 °C
V
GS
=0 V,
I
F
=30 A,
T
j
=25 °C
V
R
=15 V,
I
F
=I
s
,
d
i
F
/d
t
=400 A/µs
V
SD
Q
rr
Final Data Sheet
4
2.3, 2011-05-24
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