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JAN2N6790U

Description
MOSFET N Channel MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size646KB,9 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JAN2N6790U Overview

MOSFET N Channel MOSFET

JAN2N6790U Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeLCC
package instructionCHIP CARRIER, R-CQCC-N15
Contacts18/15
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILTY
Shell connectionSOURCE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)3.5 A
Maximum drain current (ID)2.8 A
Maximum drain-source on-resistance0.85 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-CQCC-N15
Number of components1
Number of terminals15
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)20 W
Maximum pulsed drain current (IDM)11 A
Certification statusQualified
GuidelineMIL-19500
surface mountYES
Terminal formNO LEAD
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
2N6788U and 2N6790U
Qualified Levels:
JAN, JANTX, and
JANTXV
Compliant
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/555
DESCRIPTION
These 2N6788U and 2N6790U devices are military qualified up to a JANTXV level for high-
reliability applications. Microsemi also offers numerous other products to meet higher and
lower power voltage regulation applications.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
Surface mount equivalent of JEDEC registered 2N6788 and 2N6790 numbers.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/555.
RoHS compliant by design.
U-18 LCC
Package
APPLICATIONS / BENEFITS
High frequency operation.
Lightweight, low-profile package.
ESD rated to class 1A.
Also available in:
TO-205AF Package
(leaded)
2N6788 & 2N6790
MAXIMUM RATINGS
@ T
C
= +25 °C unless otherwise noted
Parameters / Test Conditions
Junction & Storage Temperature
Thermal Resistance Junction-to-Case (see
Figure 1)
(1)
Total Power Dissipation
Drain to Gate Voltage
Drain – Source Voltage
Gate – Source Voltage
(2)
Drain Current, dc @ T
C
= +25 °C
(see Figure ?)
Drain Current, dc @ T
C
= +100 °C
Off-State Current
Source Current
(3)
Symbol
T
J
, T
stg
R
ӨJC
P
T
V
DG
V
DS
V
GS
2N6788U
2N6790U
2N6788U
2N6790U
2N6788U
2N6790U
2N6788U
2N6790U
I
D1
I
D2
I
DM
I
S
Value
-55 to +150
8.93
0.8
100
200
100
200
± 20
4.5
2.8
2.8
1.8
18
11
4.5
2.8
Unit
°C
ºC/W
W
V
V
V
A
A
A (pk)
A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
2N6788U
2N6790U
2N6788U
2N6790U
Notes:
1. Derated linearly by 0.11 W/°C for T
C
> +25 °C.
2. The following formula derives the maximum theoretical I
D
limit. I
D
is also limited by package and internal
wires and may be limited due to pin diameter.
3. I
DM
= 4 x I
D1
; I
D1
as calculated in note 2.
T4-LDS-0164-1, Rev. 1 (121482)
©2012 Microsemi Corporation
Page 1 of 8

JAN2N6790U Related Products

JAN2N6790U JAN2N6788U 2N6788U JANTXV2N6790U
Description MOSFET N Channel MOSFET Power Field-Effect Transistor, 4.5A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18/15 Power Field-Effect Transistor, 4.5A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC, LCC-18/15 MOSFET
Is it Rohs certified? incompatible incompatible conform to incompatible
package instruction CHIP CARRIER, R-CQCC-N15 CERAMIC, LCC-18/15 ROHS COMPLIANT, CERAMIC, LCC-18/15 CHIP CARRIER, R-CQCC-N15
Reach Compliance Code unknown unknown compliant unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection SOURCE SOURCE SOURCE SOURCE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V 100 V 100 V 200 V
Maximum drain current (ID) 2.8 A 4.5 A 4.5 A 2.8 A
Maximum drain-source on-resistance 0.85 Ω 0.35 Ω 0.35 Ω 0.85 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-CQCC-N15 R-CQCC-N15 R-CQCC-N15 R-CQCC-N15
Number of components 1 1 1 1
Number of terminals 15 15 15 15
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 20 W 20 W 14 W 20 W
Maximum pulsed drain current (IDM) 11 A 18 A 18 A 11 A
surface mount YES YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location QUAD QUAD QUAD QUAD
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON SILICON
Parts packaging code LCC - LCC LCC
Contacts 18/15 - 18/15 18/15
Other features HIGH RELIABILTY HIGH RELIABILTY - HIGH RELIABILTY
Certification status Qualified Qualified - Qualified
Guideline MIL-19500 MIL-19500 - MIL-19500
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