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BSS806NH6327XT

Description
MOSFET N-Ch 20V 2.3A SOT-23-3
Categorysemiconductor    Discrete semiconductor   
File Size230KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSS806NH6327XT Overview

MOSFET N-Ch 20V 2.3A SOT-23-3

BSS806NH6327XT Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current2.3 A
Rds On - Drain-Source Resistance41 mOhms
Vgs th - Gate-Source Threshold Voltage300 mV
Vgs - Gate-Source Voltage8 V
Qg - Gate Charge1.7 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Pd - Power Dissipation500 mW (1/2 W)
Channel ModeEnhancement
QualificationAEC-Q100
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height1.1 mm
Length2.9 mm
Transistor Type1 N-Channel
Width1.3 mm
Forward Transconductance - Min9 S
Fall Time3.7 ns
Rise Time9.9 ns
Factory Pack Quantity3000
Typical Turn-Off Delay Time12 ns
Typical Turn-On Delay Time7.5 ns
Unit Weight0.000282 oz
BSS806N
OptiMOS
2 Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Ultra Logic level (1.8V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
V
GS
=2.5 V
V
GS
=1.8 V
I
D
20
57
82
2.3
A
V
PG-SOT23
3
1
2
Type
BSS806N
Package
SOT23
Tape and Reel Information
H6327:
3000 pcs/ reel
Marking
YEs
Lead Free
Yes
Packing
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=2.3 A,
R
GS
=25
Ω
I
D
=2.3 A,
V
DS
=16 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
2.3
1.9
9.3
10.8
mJ
Unit
A
Reverse diode dv /dt
Gate source voltage
Power dissipation
1)
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
dv /dt
6
±8
kV/µs
V
W
°C
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 -HBM
T
A
=25 °C
0.5
-55 ... 150
0(<250V)
260 °C
55/150/56
Rev 2.3
page 1
2011-07-11

BSS806NH6327XT Related Products

BSS806NH6327XT BSS806N H6327
Description MOSFET N-Ch 20V 2.3A SOT-23-3 MOSFET N-Ch 20V 2.3A SOT-23-3
Product Category MOSFET MOSFET
Configuration Single Single
Rise Time 9.9 ns 9.9 ns
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