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ZTX1047A

Description
Bipolar Transistors - BJT NPN High Gain & Crnt
CategoryDiscrete semiconductor    The transistor   
File Size148KB,4 Pages
ManufacturerDiodes Incorporated
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ZTX1047A Overview

Bipolar Transistors - BJT NPN High Gain & Crnt

ZTX1047A Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
package instructionIN-LINE, R-PSIP-W3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)4 A
Collector-emitter maximum voltage10 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JESD-30 codeR-PSIP-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 – JANUARY 1995
FEATURES
* Very Low Saturation Voltage
* High Gain
* 4 Amp Continuous Current
APPLICATIONS
* DC-DC Convertors
* Power Management - Supply Switching
ZTX1047A
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
ZTX1047A
35
10
5
20
4
500
1
-55 to +200
UNIT
V
V
V
A
A
mA
W
°C

ZTX1047A Related Products

ZTX1047A ZTX10470ASTOB ZTX10470ASTOA
Description Bipolar Transistors - BJT NPN High Gain & Crnt Bipolar Transistors - BJT NPN High Gain & Crnt Bipolar Transistors - BJT NPN High Gain & Crnt
Product Attribute - Attribute Value Attribute Value
Manufacturer - Diodes Incorporated Diodes Incorporated
Product Category - Bipolar Transistors - BJT Bipolar Transistors - BJT
RoHS - Details Details
Mounting Style - Through Hole Through Hole
Package / Case - TO-92-3 TO-92-3
Transistor Polarity - NPN NPN
Height - 4.01 mm 4.01 mm
Length - 4.77 mm 4.77 mm
Packaging - Bulk Bulk
Width - 2.41 mm 2.41 mm
Factory Pack Quantity - 4000 4000
Unit Weight - 0.016000 oz 0.016000 oz
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