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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
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Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
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FGH25N120FTDS — 1200 V, 25 A Field Stop Trench IGBT
November 2013
FGH25N120FTDS
1200 V, 25 A Field Stop Trench IGBT
Features
• High Speed Switching
• Low Saturation Voltage: V
CE(sat)
= 1.60 V @ I
C
= 25 A
• High Input Impedance
• RoHS Compliant
General Description
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer the optimum performance for hard switching
application such as solar inverter, UPS, welder and PFC appli-
cations.
Applications
• Solar Inverter, UPS, Welder, PFC
C
G
G
C
E
TO-247
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
J
T
stg
T
L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T
C
= 25
o
C
@ T
C
= 100
o
C
@ T
C
= 25
o
C
@ T
C
= 100
o
C
@ T
C
= 25
o
C
@ T
C
= 100
o
C
Ratings
1200
± 25
50
25
75
50
25
75
313
125
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
A
A
W
W
o
C
o
C
o
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
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stm32/stm8
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