SMD Schottky Barrier Diode
CDBU0520
I
o
= 500 mA
V
R
= 20 Volts
RoHS Device
Features
-Low forward voltage.
-Designed for mounting on small surface.
-Extremely thin / leadless package.
-Majority carrier conduction.
0.039(1.00)
0.031(0.80)
0603/SOD-523F
0.071(1.80)
0.063(1.60)
Mechanical data
-Case: 0603 /SOD-523F standard package,
molded plastic.
0.014(0.35) Typ.
0.033(0.85)
0.027(0.70)
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any
-Weight: 0.003 gram(approx.).
Dimensions in inches and (millimeter)
0.028(0.70) Typ.
0.012 (0.30) Typ.
Maximum Rating
(at T
A
=25 C unless otherwise noted)
O
Parameter
Peak reverse voltage
Reverse voltage
Average forward rectified current
Forward current,surge peak
Storage temperature
Junction temperature
Conditions
Symbol Min Typ Max Unit
V
RM
V
R
I
O
30
20
0.5
2
-40
+125
+125
V
V
A
A
O
8.3 ms single half sine-wave superimposed
on rate load (JEDEC method)
I
FSM
T
STG
T
j
C
C
O
Electrical Characteristics
(at T
A
=25 C unless otherwise noted)
O
Parameter
Forward voltage
Reverse current
Capacitance between terminals
I
F
= 100mA
I
F
= 500mA
V
R
= 20V
Conditions
Symbol Min Typ Max Unit
V
F
I
R
C
T
100
0.36
0.47
100
V
uA
pF
f = 1 MHz, and 0 VDC reverse voltage
REV:A
QW-A1037
Page 1
SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (CDBU0520)
Fig. 1 - Forward characteristics
1000
100m
Fig. 2 - Reverse characteristics
Forward current (mA )
Reverse current ( A )
10m
100 C
O
100
1m
75 C
O
100u
25 C
O
75
O
C
C
125
O
-25
25
O
C
10
O
10u
C
1u
1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
-25 C
O
0.1u
0
5
10
15
20
Forward voltage (V)
Reverse voltage (V)
Fig. 3 - Capacitance between
terminals characteristics
Capacitance between terminals (
P
F)
60
Fig.4 - Current derating curve
120
Average forward current(%)
20
f=1MHz
O
T
a
=25 C
50
100
40
80
30
60
20
40
10
20
0
0
5
10
15
0
0
25
50
75
100
O
125
150
Reverse voltage (V)
Ambient temperature ( C)
REV:A
QW-A1037
Page 2
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