MRF7S19080HR3 datasheet, PDF - EEWORLD Datasheet

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MRF7S19080HR3: DescriptionRF MOSFET Transistors HV7 1.9GHZ 28V; CategoryDiscrete semiconductor The transistor; File Size1MB，19 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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MRF7S19080HR3 Overview

RF MOSFET Transistors HV7 1.9GHZ 28V

MRF7S19080HR3 Parametric

Parameter Name	Attribute value
Brand Name	Freescale
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	NXP
package instruction	FLANGE MOUNT, R-CDFM-F2
Contacts	2
Manufacturer packaging code	CASE 465-06
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	65 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	L BAND
JESD-30 code	R-CDFM-F2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	225 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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Freescale Semiconductor

Technical Data

Document Number: MRF7S19080H

Rev. 2, 3/2011

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 1930 to

1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be

used in Class AB and Class C for TD--SCDMA and PCN--PCS/cellular radio

applications.

•

Typical Single--Carrier W--CDMA Performance: V

= 28 Volts, I

750 mA, P

out

= 24 Watts Avg., f = 1987.5 MHz, IQ Magnitude Clipping,

Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%

Probability on CCDF.

Power Gain — 18 dB

Drain Efficiency — 32%

Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF

ACPR @ 5 MHz Offset — --38 dBc in 3.84 MHz Channel Bandwidth

•

Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 80 Watts CW

Output Power

•

out

@ 1 dB Compression Point

≃

80 Watts CW

Features

•

100% PAR Tested for Guaranteed Output Power Capability

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

•

Internally Matched for Ease of Use

•

Integrated ESD Protection

•

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

•

Designed for Digital Predistortion Error Correction Systems

•

RoHS Compliant

•

In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

MRF7S19080HR3

MRF7S19080HSR3

1930-

-1990 MHz, 24 W AVG., 28 V

SINGLE W-

-CDMA

LATERAL N-

-CHANNEL

RF POWER MOSFETs

CASE 465-

-06, STYLE 1

NI-

-780

MRF7S19080HR3

CASE 465A-

-06, STYLE 1

NI-

-780S

MRF7S19080HSR3

Table 1. Maximum Ratings

Rating

Drain--Source Voltage

Gate--Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

(1,2)

Symbol

DSS

stg

Value

--0.5, +65

--6.0, +10

32, +0

-- 65 to +150

150

225

Unit

Vdc

°C

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Case Temperature 81°C, 79 W CW

Case Temperature 79°C, 24 W CW

Symbol

θJC

Value

(2,3)

0.60

0.69

Unit

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MRF7S19080HR3 MRF7S19080HSR3

RF Device Data

Freescale Semiconductor

MRF7S19080HR3 Related Products

	MRF7S19080HR3	MRF7S19080HSR3
Description	RF MOSFET Transistors HV7 1.9GHZ 28V	RF MOSFET Transistors HV7 1.9GHZ 28V
Brand Name	Freescale	Freescale
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	NXP	NXP
package instruction	FLANGE MOUNT, R-CDFM-F2	FLATPACK, R-CDFP-F2
Contacts	2	2
Manufacturer packaging code	CASE 465-06	CASE 465A-06
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Is Samacsys	N	N
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	65 V	65 V
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	L BAND	L BAND
JESD-30 code	R-CDFM-F2	R-CDFP-F2
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	225 °C	225 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLATPACK
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	FLAT	FLAT
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	40
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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