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DSA9G01C0L

Description
Bipolar Transistors - BJT Bipolar Power Transistor
CategoryDiscrete semiconductor    The transistor   
File Size774KB,5 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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Bipolar Transistors - BJT Bipolar Power Transistor

DSA9G01C0L Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionSMALL OUTLINE, R-PDSO-F3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time10 weeks
Is SamacsysN
Maximum collector current (IC)0.03 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)110
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Base Number Matches1
DSA9G01
Silicon NPN epitaxial planar type
For high-frequency amplification
DSA5G01 in SSMini3 type package
Features
High transition frequency f
T
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: A4
Packaging
DSA9G01×0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Operating ambient temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
opr
T
stg
Rating
–30
–20
–5
–30
125
150
–40 to +85
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
°C
1: Base
2: Emitter
3: Collector
Panasonic
JEITA
Code
SSMini3-F3-B
SC-89
SOT-490
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1
Collector-emitter saturation voltage
Transition frequency
Reverse transfer capacitance
(Common emitter)
Noise figure
Reverse transfer impedance
2. *
1: Rank classification
Code
Rank
h
FE
Marking Symbol
B
B
70 to 140
A4B
C
C
110 to 220
A4C
0
No-rank
70 to 220
A4
Symbol
V
BE
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
f
T
C
re
NF
Z
rb
Conditions
V
CE
= –10 V, I
C
= –1 mA
V
CB
= –10 V, I
E
= 0
V
CE
= –20 V, I
B
= 0
V
EB
= –5 V, I
C
= 0
V
CE
= –10 V, I
C
= –1 mA
I
C
= –10 mA, I
B
= –1 mA
V
CE
= –10 V, I
C
= –1 mA
V
CE
= –10 V, I
C
= –1 mA, f = 10.7 MHz
V
CE
= –10 V, I
C
= –1 mA, f = 5 MHz
V
CE
= –10 V, I
C
= –1 mA, f = 2 MHz
Min
Typ
– 0.7
Max
– 0.1
–100
–10
Unit
V
µA
µA
µA
V
MHz
pF
dB
W
70
– 0.1
150
300
1.0
2.8
22
220
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: February 2014
Ver. CED
1

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